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Manufacturing method for target material

A production method and target technology, which are applied in metal material coating process, ion implantation plating, coating and other directions, can solve the problem that the size cannot be well controlled, and achieve the effect of fine and uniform internal grains and enhanced toughness

Active Publication Date: 2020-05-26
KONFOONG MATERIALS INTERNATIONAL CO LTD
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AI Technical Summary

Problems solved by technology

[0005] The problem solved by the present invention is that the size of the internal crystal grains of the copper-aluminum alloy sputtering target cannot be well controlled when making the copper-aluminum alloy target.

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Embodiment Construction

[0024] It can be seen from the background art that in the prior art, in the process of preparing a copper-aluminum alloy sputtering target with an atomic percentage of copper element of 0.25%, it is difficult to control the grain size of the target during the production process.

[0025] In order to solve the above problems, the inventor provided a method for preparing the copper-aluminum alloy through creative work, wherein, by providing a calculated copper-aluminum alloy ingot with sufficient weight, the ingot is subjected to a sufficient number of forging processes , so that the original grain structure in the ingot is destroyed to form grains with a new structure, and at the same time, the ingot’s willfulness reaches a certain level, and then the ingot is rolled in all directions by a rolling process, and it will become After the required thickness is met, the thermal processing process is carried out on the ingot. Since the thermal processing process is a metal heat treatm...

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Abstract

The invention discloses a manufacturing method for a target material. The manufacturing method includes the steps that copper-aluminum alloy material ingots are provided; at least two times of primaryforging technology are conducted on the material ingots; after each time of primary forging treatment, the material ingots are subjected to first heat treatment technology; the material ingots obtained after forging and heat treatment are subjected to calendering; and heat machining technology is conducted on the material ingots obtained after calendering. Due to the multiple times of forging technology and the heat treatment technology, grain structures in the material ingots can be fine, the material toughness is greatly improved, calendering is conducted on the material ingots so that theinner structures of the material ingots can be uniform and reach the thickness of needed target materials, then a copper-aluminum alloy target material is manufactured through the heat machining technology, and the size of inner grains of the target material is adjusted according to heat machining technology parameters.

Description

technical field [0001] The invention relates to the field of semiconductor sputtering target material preparation, and particularly designs a target material manufacturing method. Background technique [0002] The sputtering target is an extremely important key material necessary for the manufacture of semiconductor chips. The principle is to use PVD (Physical Vapor Deposition Technology) to bombard the target with high-pressure accelerated gaseous ions, so that the atoms of the target are sputtered out to It is deposited on the silicon wafer in the form of a thin film, which eventually forms the complex wiring structure in the semiconductor chip. Sputtering targets have many advantages such as uniformity and controllability of metal coatings, and are widely used in the semiconductor field. The quality of PVD film mainly depends on the purity, microstructure and other factors of the sputtering target. With the rapid development of the semiconductor industry, the demand for...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22F1/057C23C14/34C22C21/12B21J5/00
CPCB21J5/002C22C21/12C22F1/002C22F1/057C23C14/3414
Inventor 姚力军潘杰王学泽曹欢欢
Owner KONFOONG MATERIALS INTERNATIONAL CO LTD
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