Etching uniformity adjusting device and method

Abstract

The invention discloses an etching uniformity adjusting device and method. The device comprises an inductor and a capacitor which are connected in parallel, one end is connected with a built-in ring located at the edge of an electrostatic chuck of an etching machine, and the other end is grounded. By adjusting the capacitance value of the capacitor, the purpose of controlling the edge electric field can be achieved, so that the etching rate of the edge is adjusted, and the etching uniformity is realized.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to an etching uniformity adjusting device and method. Background technique [0002] In a traditional etching machine, a focus ring and a built-in ring are arranged around the electrostatic chuck, so that the electric field at the edge of the wafer is perpendicular to the horizontal direction of the wafer, and the etching rate and direction of the wafer edge are the same as those in the middle. However, as the plasma etching time accumulates, the focus ring at the edge of the electrostatic chuck will also be eroded by the plasma, causing its thickness to become thinner, causing the electric field direction of the sheath to tilt, and finally, the etching rate and etching direction at the edge of the wafer will change. [0003] Similarly, the configuration of the focus ring and the built-in ring around the electrostatic chuck can only match specific plasma conditions. When the e...

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Problems solved by technology

However, as the plasma etching time accumulates, the focus ring at the edge of the electrostatic chuck will also be eroded by the plasma, resulting in a thinner thickness and a tilt in the direction of the sheath electric field. Finally, the etching rate and etching direction at the edge of the wafer will change.

[0003] Similarly, the configuration of the focus ring and the built-in ring around the electrostatic chuck can only match specific plasma conditions. When the etching machine needs to run multiple processes, it often cannot fully meet the uniformity requirements of the process at the edge of the wafer, or needs to be replaced. Different focus rings and built-in rings to improve edge uniformity

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