Semiconductor structure and manufacturing method thereof

Abstract

The invention provides a manufacturing method of a semiconductor structure, which is characterized by comprising the steps of providing a substrate; forming a hole or a trench on the substrate, wherein the hole or the trench is provided with a side wall upper part, a side wall lower part and a bottom part; forming a tungsten nitride layer on the side wall upper part, the side wall lower part and the bottom part of the hole or the trench, wherein the thicknesses of tungsten nitride formed on the side wall upper part, the side wall lower part and the bottom part are the same; and depositing a metal layer on the tungsten nitride layer and filling the hole or the trench with the metal layer. According to the invention, a barrier layer is excellent in step coverage, so that the hole or trench can be fully filled with metal so as to avoid the generation of holes, the deposited barrier layer is proper in thickness and compact, good in adhesive force and excellent in barrier performance, the contact resistance is low, the product yield can be improved, and the production cost is reduced.

Description

technical field [0001] The invention relates to the field of semiconductors, in particular to a semiconductor structure and a manufacturing method thereof. Background technique [0002] Currently, as semiconductors are widely used in digital products such as computers and mobile phones, the manufacturing process of semiconductor products has also received extensive attention. [0003] In an existing semiconductor manufacturing process, a chemical vapor deposition (Chemical Vapor Deposition: CVD) process or a physical vapor deposition (Physical Vapor Deposition: PVD) process may be used to manufacture the semiconductor. Due to the advantages of the physical vapor deposition process such as a wide range of optional thin film materials, relatively low deposition temperature, and excellent bonding ability, the physical vapor deposition process has become an indispensable process in most semiconductor manufacturing processes. [0004] With the recent development of semiconductor...

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Problems solved by technology

Increased aspect ratios can lead to tungsten voids or seams in device features, resulting in reduced yield and performance of chips

[0005] In the conventional deposited tungsten interconnect structure, titanium / titanium nitride is required as a barrier layer, but the step coverage of titanium nitride formed by physical vapor deposition is poor, and the thickness of the barrier layer deposited on the upper part of the contact hole and the side wall of the via hole is lower than that of the barrier layer. The lower part of the side wall is thick, resulting in poor subsequent tungsten filling, forming voids or gaps, reducing product yield and reliability

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