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Improved method for growing strained silicon under different layout features

A strained silicon and layout technology, applied in chemical instruments and methods, crystal growth, single crystal growth, etc., can solve problems such as inability to effectively improve device performance, insufficient stress, and difficult epitaxy growth, etc., to improve LOD effect and increase volume Effect

Active Publication Date: 2021-04-13
SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, in the complex layout environment, the feature layout in the small SA (small active area between the gate and STI) area, due to the limitation of the silicon substrate, the side adjacent to the STI (Shallow Trench Isolation) limits the strain Silicon growth, epitaxy is not easy to grow, resulting in insufficient stress, which cannot effectively improve the performance of the device

Method used

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  • Improved method for growing strained silicon under different layout features
  • Improved method for growing strained silicon under different layout features
  • Improved method for growing strained silicon under different layout features

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Embodiment Construction

[0012] The improved method for growing strained silicon under different layout features is realized by adopting the following technical solutions in the following embodiments:

[0013] Step 1, see figure 1 As shown, a hole is formed by etching at the side end of the STI in the silicon substrate 1, and the hole is diamond-shaped.

[0014] Step two, see figure 2 As shown, a single crystal silicon thin film 8 is formed on the inner surface of the hole by selective epitaxial growth, and the growth of the single crystal silicon can be controlled to conform to the shape of the hole by using hydrochloric acid etch back method. For selective epitaxial growth of monocrystalline silicon thin films, the precursor is SiH2Cl2 (DCS dichlorodihydrosilicon), the temperature is 700-800 °C, the pressure is

[0015] The pressure used in the hydrochloric acid etch-back method is 20-30 mTorr, and the temperature is 700-800° C.

[0016] Step three, see figure 2 As shown, silicon germanium 9 ...

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Abstract

The invention discloses an improved method for growing strained silicon under different layout features. After the diamond-shaped hole of a silicon substrate is etched, a single-crystal silicon film is formed on the inner surface of the hole. The present invention can effectively improve the LOD effect.

Description

technical field [0001] The invention relates to the field of semiconductor integrated circuits, in particular to an improved method for growing strained silicon under different layout features. Background technique [0002] Strained silicon engineering uses epitaxial technology to grow SiGe (silicon germanium) to generate compressive stress on the P-type channel and grow SiC (silicon carbide) or SiP (silicon phosphide) to generate tensile stress on the N-type channel. Strained silicon engineering can effectively improve carrier mobility, thereby improving device performance. However, in the complex layout environment, the feature layout in the small SA (small active area between the gate and STI) area, due to the limitation of the silicon substrate, the side adjacent to the STI (Shallow Trench Isolation) limits the strain For the growth of silicon, epitaxy is not easy to grow, resulting in insufficient stress, which cannot effectively improve the performance of the device. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/02
CPCC30B23/02C30B29/06H01L21/02381H01L21/0262
Inventor 杨明仑萧至廷薛培堃
Owner SHANGHAI HUALI INTEGRATED CIRCUTE MFG CO LTD