Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Super-junction VDMOS device with improved dynamic characteristics

A technology of dynamic characteristics and devices, applied in the fields of semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve the problems of switching loss and EMI noise difficult to adjust, drain voltage and current oscillation increase, etc., to achieve bidirectional switching EMI noise Optimize, reduce switching power consumption, improve the effect of dynamic characteristics

Inactive Publication Date: 2020-06-05
UNIV OF ELECTRONICS SCI & TECH OF CHINA +1
View PDF12 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The smaller the Cgd value of the superjunction device, the shorter the Miller plateau of the switching curve, the faster the switching speed, and the smaller the switching loss, but at the same time the oscillation of the drain voltage and current increases significantly, resulting in switching loss and EMI noise that are difficult to adjust contradiction

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Super-junction VDMOS device with improved dynamic characteristics
  • Super-junction VDMOS device with improved dynamic characteristics

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0022] The principles and features of the present invention are described below in conjunction with the accompanying drawings, and the examples given are only used to explain the present invention, and are not intended to limit the scope of the present invention.

[0023] Such as figure 1 As shown, a super-junction VDMOS device with improved dynamic characteristics provided by the first embodiment of the present invention includes a metallized drain 1, a heavily doped semiconductor substrate 2 of the first conductivity type located on the metallized drain 1, A lightly doped first conductivity type semiconductor column 3 located on the first conductivity type semiconductor substrate 2; a second semiconductor column located on the first conductivity type semiconductor substrate 2 and on both sides of the first conductivity type semiconductor column 3 conductivity type semiconductor pillar 4;

[0024] The top of the second conductivity type semiconductor column 4 and the top of ...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

The invention relates to a super-junction VDMOS device capable of improving dynamic characteristics, and belongs to the technical field of power semiconductor devices. The invention provides a super-junction VDMOS device capable of improving dynamic characteristics. A lightly doped second conductive type buried layer is introduced into the surface of a lightly doped first conductive type semiconductor column, and a high-K dielectric material layer and a second polycrystalline silicon electrode cover on the substrate. On the premise that the withstand voltage of the device is not affected, thedevice has small Cgd under low leakage voltage and large Cgd under high leakage voltage, switching time can be shortened, switching power consumption can be reduced, switching oscillation can be reduced, EMI can be relieved, and then the dynamic characteristic of the super-junction device is improved.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices, in particular to a super-junction VDMOS device with improved dynamic characteristics. Background technique [0002] The power super-junction VDMOS structure uses alternating P-columns and N-columns to replace the N-drift region of traditional power devices, thereby effectively reducing the on-resistance and obtaining lower on-state power consumption. Due to its unique high input impedance, low driving power, high switching speed, superior frequency characteristics, and good thermal stability, it is widely used in various fields such as switching power supplies, automotive electronics, and motor drives. [0003] Capacitance characteristics are crucial for the turn-on and turn-off processes of power superjunction devices. Wherein, the size of the gate-to-drain capacitance Cgd will affect the switching speed and EMI (Electromagnetic Interference) characteristics of the device. ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/78H01L29/06H01L21/336
CPCH01L29/0603H01L29/0684H01L29/66712H01L29/7802
Inventor 任敏郭乔张新李巍梅佳明刘洋张雪幡高巍李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com