Water-based polishing solution

A polishing liquid and water-based technology, applied in the field of polishing, can solve the problems of weak anti-sedimentation effect and achieve good anti-sedimentation effect

Inactive Publication Date: 2020-06-12
大连圣多教育咨询有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Another method is to add additional preparations such as wetting agents and thixotropic agents to the entire suspension system to prevent the magnetic particles from settling and agglomerating. Among them, the wetting agent prevents the agglomeration and flocculation of the particles by increasing the steric hindrance between the particles. Although this type of material can prevent the flocculation of particles, the anti-sedimentation effect is weak

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0033] S1, the magnetic SiO 2 Nanoparticles and benzyltrichlorosilane were uniformly dispersed in toluene at a mass ratio of 1:2, reacted at 75°C for 2 days, separated the solid, washed, and dried to obtain chlorobenzyl-grafted SiO 2 Nanoparticles;

[0034] S2, N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is added to water, and hydrolyzed at pH=10~11 to obtain a hydrolyzate solution, wherein, N-(2- The mass ratio of aminoethyl)-3-aminopropylmethyldiethoxysilane to water is 1:10; the magnetic SiO 2 Nanoparticles are uniformly dispersed in water at 1g: 100mL to obtain a dispersion; after mixing the hydrolyzate solution and the dispersion, heat and reflux at 90°C for 12h, separate and dry to obtain amino-modified SiO 2 nanoparticles, among them, magnetic SiO 2 The mass ratio of nanoparticles to N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is 2.5:1;

[0035] S3, SiO grafted with chlorobenzyl 2 Nanoparticles and amino-modified SiO 2 Nanoparticles are uniformly dis...

Embodiment 2

[0042] S1, the magnetic SiO 2 Nanoparticles and benzyltrichlorosilane were uniformly dispersed in toluene at a mass ratio of 1:2, reacted at 75°C for 2 days, separated the solid, washed, and dried to obtain chlorobenzyl-grafted SiO 2 Nanoparticles;

[0043] S2, N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is added to water, and hydrolyzed at pH=10~11 to obtain a hydrolyzate solution, wherein, N-(2- The mass ratio of aminoethyl)-3-aminopropylmethyldiethoxysilane to water is 1:10; the magnetic SiO 2 Nanoparticles are uniformly dispersed in water at 1g: 100mL to obtain a dispersion; after mixing the hydrolyzate solution and the dispersion, heat and reflux at 90°C for 12h, separate and dry to obtain amino-modified SiO 2 nanoparticles, among them, magnetic SiO 2 The mass ratio of nanoparticles to N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is 2.5:1;

[0044] S3, SiO grafted with chlorobenzyl 2 Nanoparticles and amino-modified SiO 2 The nanoparticles are uniformly...

Embodiment 3

[0049] S1, the magnetic SiO 2 Nanoparticles and benzyltrichlorosilane were uniformly dispersed in toluene at a mass ratio of 1:2, reacted at 75°C for 2 days, separated the solid, washed, and dried to obtain chlorobenzyl-grafted SiO 2 Nanoparticles;

[0050] S2, N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is added to water, and hydrolyzed at pH=10~11 to obtain a hydrolyzate solution, wherein, N-(2- The mass ratio of aminoethyl)-3-aminopropylmethyldiethoxysilane to water is 1:10; the magnetic SiO 2 Nanoparticles are uniformly dispersed in water at 1g: 100mL to obtain a dispersion; after mixing the hydrolyzate solution and the dispersion, heat and reflux at 90°C for 12h, separate and dry to obtain amino-modified SiO 2 nanoparticles, among them, magnetic SiO 2 The mass ratio of nanoparticles to N-(2-aminoethyl)-3-aminopropylmethyldiethoxysilane is 2.5:1;

[0051] S3, SiO grafted with chlorobenzyl 2 Nanoparticles and amino-modified SiO 2 Nanoparticles are uniformly dis...

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Abstract

The invention relates to a water-based polishing solution, and belongs to the field of polishing. The invention discloses a water-based polishing solution. The water-based polishing solution is composed of a magnetorheological fluid and a grinding material, the magnetorheological fluid is composed of, by mass, 30-80% of water, 3-8% of a thixotropic agent, 0-5% of a dispersing agent, 0-5% of a wetting agent and 20-70% of carbonyl iron powder, and the mass ratio of the grinding material to the magnetorheological fluid is (1-2):10. The invention provides a water-based polishing agent. The polishing agent is composed of the magnetorheological fluid base solution and the grinding material, the thixotropic agent used by the magnetorheological fluid is provided by a method, the SiO2 nanoparticlethixotropic agent prepared by the method provided by the invention takes magnetic SiO2 nanoparticles with a core-shell structure as a main raw material, the thixotropic agent has certain magnetism, and the corresponding magnetism is relatively weak due to relatively small magnetic core.

Description

technical field [0001] The invention relates to a water-based polishing liquid, which belongs to the field of polishing. Background technique [0002] With the rapid development of all walks of life, chip processing, precision device processing, special-shaped parts processing, etc. have higher and higher requirements for smooth surfaces. The main way to obtain smooth surfaces is polishing. At present, polishing methods are widely used, including mechanical polishing and chemical polishing. , chemical mechanical polishing, etc. Part of the polishing is only suitable for flattening and polishing of flat surfaces, not for polishing of curved workpieces. The polishing methods that can be used for curved surfaces also have their own problems. For example, the liquid used in chemical polishing is mostly corrosive liquid, which will cause certain damage to the equipment. [0003] Magnetorheological fluid is a new type of artificial intelligence material. The rheological properti...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09G1/02C09C1/30C09C3/12C09C3/06
CPCC09C1/309C09C3/006C09C3/06C09C3/12C09G1/02
Inventor 不公告发明人
Owner 大连圣多教育咨询有限公司
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