Reworking method of bonding pad crystallization defects and semiconductor device

Abstract

The invention provides a reworking method of bonding pad crystallization defects and a semiconductor device, and the method comprises the steps: providing a front-end device, forming a metal layer onthe front-end device, forming a polyimide layer on the metal layer, and forming a crystallization defect on a bonding pad; taking the polyimide layer as a mask, etching to remove part of the metal layer on the bonding pad, bombarding the crystallization defect to disperse the crystallization defect, and enabling the polyimide layer to play roles of the mask layer and the passivation layer; then carrying out a cleaning process to remove crystallization defects; and performing a plasticizing process to form a protective layer covering the bonding pad, the protective layer not only blocking the generation of crystal defects, but also preventing the generated crystal defects from eroding the reworked wafer. According to the invention, the problem of crystallization defects on the surface of the bonding pad of the semiconductor device taking polyimide as the passivation layer can be effectively solved, and scrap is reduced through reworking. The process of forming a patterned mask layer onthe passivation layer in a conventional rework process is omitted, and process cost control is facilitated.

Description

technical field [0001] The invention belongs to the technical field of integrated circuit manufacturing, and in particular relates to a rework method for pad crystal defects and a semiconductor device. Background technique [0002] In the manufacturing process of semiconductor devices, after the device structure and interconnection structure are formed on the wafer, a passivation layer will be formed on the wafer to protect the internal devices. The passivation layer has openings that expose the pads. In practical applications, it is found that crystallization defects are easily formed on the surface of the pads. The back-end process of semiconductor device (wafer) manufacturing is often affected by the crystallization defects of the pads. The usual rework method is to form a patterned mask layer (such as a patterned photoresist layer) on the passivation layer of the semiconductor device (wafer), and use the patterned mask layer as a mask to etch and remove Pad crystallizat...

AI Technical Summary

Problems solved by technology

[0005] The object of the present invention is to provide a method for reworking crystallization defects of pads and a semiconductor device to solve the problem of crystallization defects on the surface of pads

Images