Pulsed DC source for high power impulse magnetron sputtering physical vapor deposition of dielectric films and methods of application
A physical vapor deposition, dielectric film technology, used in sputtering, electrical components, circuits, etc., can solve problems such as low hard mask density and high particle count
Inactive Publication Date: 2020-06-12
APPLIED MATERIALS INC
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Deep contact hole deformation may be related to lower hard mask density and higher particle count
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[0016] In the following detailed description, numerous specific details are set forth in order to provide a thorough understanding of example embodiments or other examples described herein. However, these embodiments and examples can be practiced without the specific details. In other instances, well-known methods, processes, components and / or circuits have not been described in detail so as not to obscure the following description. Furthermore, the disclosed embodiments are for exemplary purposes only, and other embodiments may be used instead of or in combination with the disclosed embodiments.
[0017] figure 1 An exemplary physical vapor deposition (PVD) processing chamber 100 (e.g., a sputtering processing chamber) suitable for processing sputter deposited materials using high power pulsed magnetron sputtering (HIPIMS) is shown in accordance with an embodiment of the present principles . One example of a processing chamber that may be suitable for forming dielectric fi...
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Abstract
An apparatus and method of forming a dielectric film layer using a physical vapor deposition process include delivering a sputter gas to a substrate positioned in a processing region of a process chamber, the process chamber having a dielectric-containing sputter target, delivering an energy pulse to the sputter gas to create a sputtering plasma, the sputtering plasma being formed by energy pulseshaving an average voltage between about 800 volts and about 2000 volts and an average current between about 50 amps and about 300 amps at a frequency which is less than 50 kHz and greater than 5 kHzand directing the sputtering plasma toward the dielectric-containing sputter target to form an ionized species comprising dielectric material sputtered from the dielectric-containing sputter target, the ionized species forming a dielectric-containing film on the substrate.
Description
technical field [0001] Embodiments of the present principles relate generally to methods and apparatus for depositing films, and more particularly to HIPIMS sources and methods for depositing dielectric pulsed high power pulsed magnetron sputtering (HiPIMS) physical vapor deposition (PVD) films. Background technique [0002] As the semiconductor industry introduces new generations of integrated circuits (ICs) with higher performance and greater functionality, the density of the components forming these ICs increases while the size, size and spacing between individual features or components decreases. While in the past this reduction was limited only by the ability to define structures using photolithography, device geometries with dimensions measured in micrometers or nanometers create new limiting factors, such as the conductivity of conductive interconnects, the The dielectric constant of the insulating material used, etching small structures or other challenges in process...
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IPC IPC(8): H01L21/02H05H1/46H01L21/67C23C16/455H01L21/28
CPCH01L21/31144C23C14/3485C23C14/0605C23C14/35H01L21/02115H01J37/3467H01J37/3426H01L21/02266H01J37/3405H01L21/02274H05H1/46H01L21/67017C23C16/45536H01L21/28194
Inventor 维加斯拉夫·巴巴扬阿道夫·米勒·艾伦巴加夫·西特拉罗纳德·D·迪多尔凡妮莎·法恩华忠强瓦贝哈夫·索尼吴梦露
Owner APPLIED MATERIALS INC