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A directional processing method applied to single crystal

A processing method and single crystal technology, which are applied to machine tools, metal processing equipment, and manufacturing tools suitable for grinding workpiece planes, which can solve the problem of long time consuming for directional processing and achieve the effect of improving processing efficiency.

Active Publication Date: 2021-12-24
广州南砂晶圆半导体技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] The embodiment of the present application provides a method of directional processing applied to single crystals to solve the technical problem of long time-consuming traditional directional processing

Method used

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  • A directional processing method applied to single crystal
  • A directional processing method applied to single crystal
  • A directional processing method applied to single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0057] Take the oriented processing of 4H-SiC(000-1) carbon surface as an example.

[0058] S201: On the surface of the 4H-SiC ingot, draw a vertical 0° orientation line and a 90° orientation line through its center point.

[0059] S202: Measure the off angle of the surface to be processed of the 4H-SiC ingot along the 0° azimuth line and the 90° azimuth line by using X-ray diffraction orientation technology, and the obtained off angle value is Δ 0 = 0.64°, Δ 90 =0.77°.

[0060] S203: According to the above deviation angle value, calculate the real deviation angle Δ between the surface to be processed and the diffraction atomic surface and the azimuth line φ corresponding to the real deviation angle, Δ=1°, φ=50°, that is, the surface to be processed The included angle with the (000-1) carbon surface is 1°, and the angle measured along the azimuth line of 50° is the real included angle between the surface to be processed and the (000-1) carbon surface.

[0061] S204: Place t...

Embodiment 2

[0065] Take the oriented processing of 6H-SiC(000-1) carbon surface as an example.

[0066] S301: On the surface of the 6H-SiC ingot, draw a vertical 0° orientation line and a 90° orientation line through its center point.

[0067] S302: Using X-ray diffraction orientation technology, measure the off-angle of the surface to be processed of the 6H-SiC ingot along the 0° azimuth line and the 90° azimuth line, and the obtained off-angle value is Δ 0 =-0.73°, Δ 90 =0.34°.

[0068] S303: According to the above deviation angle value, calculate the real deviation angle Δ between the surface to be processed and the diffraction atomic surface and the azimuth line φ corresponding to the real deviation angle, Δ=0.8°, φ=155°, that is, the surface to be processed The angle between the (000-1) carbon plane and the (000-1) carbon plane is 0.8°, and the angle measured along the azimuth line of 155° is the real angle between the surface to be processed and the (000-1) carbon plane.

[0069]...

Embodiment 3

[0072] Take the directional processing of 4H-SiC(0001) silicon surface as an example.

[0073] S401: On the surface of the 4H-SiC ingot, draw a vertical 0° orientation line and a 90° orientation line through its center point.

[0074] S402: Measure the off angle of the surface to be processed of the 4H-SiC ingot along the 0° azimuth line and the 90° azimuth line by using X-ray diffraction orientation technology, and the obtained off angle value is Δ 0 = 1.23°, Δ 90 =-1.03°.

[0075] S403: Calculate the real declination angle Δ between the surface to be processed and the diffraction atomic surface and the azimuth line φ corresponding to the real declination angle according to the above declination angle value, Δ=1.6°, φ=320°, that is, the surface to be processed The angle between the (0001) silicon surface and the (0001) silicon surface is 1.6°, and the angle measured along the direction of the azimuth line of 320° is the real angle between the surface to be processed and the...

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Abstract

The present application provides an orientation processing method applied to a single crystal. Specifically, firstly, the deflection angles of the surface to be processed at the 0° azimuth line and the 90° azimuth line are respectively measured by using X-ray diffraction orientation technology; Then, using the declination angle at the 0° azimuth line and the 90° azimuth line, calculate the real declination angle between the surface to be processed and the diffraction atomic surface and the azimuth line corresponding to the real declination angle; finally, according to the real declination angle and the real The azimuth line corresponding to the off-angle, on the workpiece table of the surface grinder, the surface to be processed of the single crystal is processed into a processing surface parallel to the diffraction atomic plane. The processing method provided in the present application only needs one directional processing to process a suitable processing surface, thereby improving the processing efficiency.

Description

technical field [0001] The present application relates to the technical field of single crystal substrate processing, and in particular to a directional processing method applied to single crystal. Background technique [0002] As a member of the third-generation wide bandgap semiconductor materials, silicon carbide (SiC) has high thermal conductivity, low thermal expansion coefficient, large bandgap width, high saturation electron drift velocity, strong critical breakdown field, high chemical stability and Excellent performance such as strong radiation resistance. Based on these excellent properties, SiC single crystals are widely used as substrates in the fields of power electronics, microwave communications and semiconductors. [0003] After the SiC seed crystal growth is completed to obtain the SiC single crystal, it generally needs to undergo crystal orientation, spheronization, cutting, grinding, polishing and other processes to process the SiC single crystal into a S...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B7/22B24B49/12B24B41/06H01L21/02
CPCB24B7/228B24B49/12B24B41/068H01L21/02013H01L21/02027
Inventor 胡小波王垚浩徐现刚徐南于国建陈秀芳杨祥龙彭燕胡建云
Owner 广州南砂晶圆半导体技术有限公司