Semiconductor device and manufacturing method thereof
A manufacturing method and semiconductor technology, applied in the direction of semiconductor/solid-state device manufacturing, semiconductor devices, electric solid-state devices, etc., can solve problems such as improvement, inability to conduct electrical connections, and inability to optimize the electrical performance of back-illuminated CMOS image sensors, etc., to achieve Performance optimization, electrical performance improvement, and the effect of electrical performance optimization
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[0059] A manufacturing process of a metal grid layer in a pixel area is as follows:
[0060] Such as Figure 1a As shown, a substrate 10 having a pixel region 11 is provided;
[0061] Such as Figure 1a and 1b As shown, a pad oxide layer 12 is formed on the pixel region 11, a first patterned photoresist layer 13 is formed on the pad oxide layer 12, and the first patterned photoresist layer 13 As a mask, etch the pad oxide layer 12 on the pixel area 11 and the substrate 10 with a partial thickness to form a trench 14 in the substrate 10 of the pixel area 11, and remove the first A patterned photoresist layer 13;
[0062] Such as Figure 1c As shown, an isolation oxide layer 151 is formed on the surface of the trench 14 and the surface of the pad oxide layer 12, and a conductive metal layer 152 is filled in the trench 14, and the conductive metal layer 152 covers the On the pad oxide layer 12, the conductive metal layer 152, the isolation oxide layer 151 and the pad oxide ...
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