Surface acoustic wave resonator and forming method thereof

A surface acoustic wave and resonator technology, applied in the field of surface acoustic wave resonators and their formation, can solve the problems of difficult preparation of surface acoustic wave resonators, achieve the effect of reducing loss and improving Q value

Pending Publication Date: 2020-06-19
SEMICON MFG ELECTRONICS (SHAOXING) CORP
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] The purpose of the present invention is to provide a surface acoustic wave resonator to solve the difficulty of prepar

Method used

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  • Surface acoustic wave resonator and forming method thereof
  • Surface acoustic wave resonator and forming method thereof
  • Surface acoustic wave resonator and forming method thereof

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Embodiment 1

[0060] figure 2 It is a schematic structural diagram of a surface acoustic wave resonator in Embodiment 1 of the present invention. Such as figure 2 As shown, the surface acoustic wave resonator includes a substrate 100, and a bonding layer 210, a reflective layer 220, and a piezoelectric material layer 300 on the substrate 100. Wherein, a cavity 110 is further formed in the substrate 100, and the reflective layer 220 covers the opening of the cavity 110.

[0061] It should be noted that the surface acoustic wave resonator in this embodiment is not only provided with a reflective layer 220, so as to use the reflective layer 220 to reflect leaked sound waves back into the piezoelectric material layer 300. In addition, a cavity 110 is further provided in the substrate 100, so that the cavity 110 can be used to further reflect the leaked sound waves. That is, in this embodiment, by using the reflective layer 220 and the cavity 110, sound waves can be reflected multiple times to e...

Embodiment 2

[0099] The difference from the first embodiment is that in the reflective layer of this embodiment, the bonding layer and the reflective layer are both covered on the opening of the cavity in the first substrate.

[0100] Figure 5 It is a schematic diagram of the structure of the surface acoustic wave resonator in the second embodiment of the present invention. Such as Figure 5 As shown, similar to the first embodiment, a cavity 110 is also formed in the substrate 100 of this embodiment. However, unlike the first embodiment, in this embodiment, the bonding layer 210 also covers the top opening of the cavity 110.

[0101] Specifically, the bonding layer 210' covers the opening of the cavity 110 and extends to the periphery of the cavity 110. And, the reflective layer 220 is bonded to the entire top surface of the bonding layer 210', which is beneficial to improve the bonding strength between the bonding layer 210' and the reflective layer 220.

[0102] That is, in this embodiment,...

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Abstract

The invention provides a surface acoustic wave resonator and a forming method thereof. The surface acoustic wave resonator is not only provided with the reflecting layer, but also provided with the cavity, so that multiple reflections of sound waves propagating in the vertical direction can be realized, the loss of sound wave energy is reduced, and the Q value of the surface acoustic wave resonator is further improved. Moreover, the reflecting layer is bonded with the bonding layer made of the same material, so that the bonding layer and the reflecting layer are bonded more easily, the bondingstrength between the bonding layer and the reflecting layer can be improved, and the structural stability of the formed surface acoustic wave resonator is correspondingly improved.

Description

Technical field [0001] The present invention relates to the field of semiconductor technology, in particular to a surface acoustic wave resonator and a method of forming the same. Background technique [0002] Surface acoustic wave resonators (SAW) are solid-state electronic devices, which mainly use acoustic-electric transducers to complete signal conversion and processing from electrical signals to acoustic signals to electrical signals on a piezoelectric material layer. At present, surface acoustic wave resonators are widely used based on their stable frequency source function and filtering function. With the continuous development of technology, the requirements for surface acoustic wave resonators are becoming higher and higher. Therefore, how to further increase the Q value of the surface acoustic wave resonator has always been a hot spot in the industry. [0003] In recent years, a high-performance surface acoustic wave resonator (IHP-SAW) has been proposed. The high-perfor...

Claims

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Application Information

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IPC IPC(8): H03H9/64
CPCH03H9/64
Inventor 项少华王冲王大甲穆苑龙魏有晨
Owner SEMICON MFG ELECTRONICS (SHAOXING) CORP
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