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Method for preparing ZnO piezoresistor ceramic by adopting Nd and Zr ion composite donor doping

A donor doping and varistor technology, applied in the field of materials, can solve the problem of the container becoming larger, and achieve the effects of low residual voltage, small leakage current and stable aging performance.

Inactive Publication Date: 2020-06-23
XINJIANG UNIVERSITY
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

If the lightning arrester is to cope with ultra-high voltage, it is necessary to accumulate a large number of lightning protection elements that are usually produced, so all the lightning protection elements need to be longer and the storage container must be larger

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] 1) Raw material preparation

[0024] The low residual voltage ZnO varistor ceramic material is ZnO (90 mol%), Bi 2 o 3 (1.5 mol%), Sb 2 o 3 (1mol%), MnO 2 (1 mol %), Cr 2 o 3 (1 mol %), Co 2 o 3 (1 mol %), SiO 2 (1.5 mol %), Al(NO 3 ) 3 (1 mol %), Ga(NO 3 ) 3 (1 mol %), Nd2O3 (0.03mol%) and Zr(NO3)4·5H2O (1 mol ~3 mol %) to prepare the starting materials.

[0025] 2) Preparation of Auxiliary Addition Slurry

[0026] Bi 2 o 3 (1.5 mol%), Sb 2 o 3 (1 mol %), MnO 2 (1 mol %), Cr 2 o 3 (1 mol %), Co 2 o 3 (1 mol%) and SiO 2 (1.5 mol %) and Nd2O3 (0.03 mol%) were put into the ball mill jar of the planetary ball mill, and deionized water 1.5 times the weight of the powder was added, and ball milled for 2 hours.

[0027] 3) Mix the auxiliary additive slurry with half of the main ZnO material

[0028] Add PVA (bonding agent) and dispersant sequentially with deionized water to the auxiliary slurry after ball milling; add half of the prepared ZnO;

[00...

Embodiment 2

[0046] 1) Raw material preparation

[0047] The low residual voltage ZnO varistor ceramic material is ZnO (95.8 mol%), Bi 2 o 3 (0.5mol%), Sb 2 o 3 (0.5 mol %), MnO 2 (0.5 mol %), Cr 2 o 3 (0.5 mol %), Co 2 o 3 (0.5 mol %), SiO 2 (1mol %), Al(NO 3 ) 3 (0.1 mol %), Nd2O3 (0.03 mol%) and Zr(NO3)4·5H2O (2 mol %) to prepare the starting materials.

[0048] 2) Preparation of Auxiliary Addition Slurry

[0049] Bi 2 o 3 (0.5mol%), Sb 2 o 3 (0.5 mol %), MnO 2 (0.5 mol %), Cr 2 o 3 (0.5 mol %), Co 2 o 3 (0.5 mol %), SiO 2 (1mol%) and Nd2O3 (0.03mol%) were put into the ball mill tank of the planetary ball mill, and deionized water 1.5 times the weight of the powder was added, and ball milled for 2 hours.

[0050] 3) Mix the auxiliary additive slurry with half of the main ZnO material

[0051] Add PVA (bonding agent) and dispersant sequentially with deionized water to the auxiliary slurry after ball milling; add half of the prepared ZnO;

[0052] 4) Add aluminum,...

Embodiment 3

[0069] 1) Raw material preparation

[0070] The low residual voltage ZnO varistor ceramic material is ZnO (87.5 mol%), Bi 2 o 3 (2mol%), Sb 2 o 3 (1.5 mol %), MnO 2 (1mol%), Cr 2 o 3 (1 mol %), Co 2 o 3 (1.5 mol %), SiO 2 (2mol%), Al(NO 3 ) 3 (1 mol %), Nd2O3 (0.04mol%) and Zr(NO3)4·5H2O (2 mol %) to prepare the starting materials.

[0071] 2) Preparation of auxiliary additives for ball milling

[0072] Bi 2 o 3 (2 mol %), Sb 2 o 3 (1.5 mol %), MnO 2 (1 mol %), Cr 2 o 3 (1 mol %), Co 2 o 3 (1.5mol%) and SiO 2 (2mol%) and Nd2O3 (0.04mol%) were put into the ball mill tank of the planetary ball mill, and deionized water 1.5 times the weight of the powder was added, and ball milled for 2 hours.

[0073] 3) Mix the auxiliary additive slurry with half of the main ZnO material

[0074] Add PVA (bonding agent) and dispersant sequentially with deionized water to the auxiliary slurry after ball milling; add half of the prepared ZnO;

[0075] 4) Add aluminum, gal...

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PUM

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Abstract

The invention discloses a method for preparing ZnO piezoresistor ceramic by adopting Nd and Zr ion composite donor doping. The preparation method comprises the following steps: adding ZnO, adding ions, forming, discharging glue and sintering. The preparation method is characterized in that Al ions and Zr ions are added in the ion adding step, Nd2O3 is added in the raw material preparation step, and the Zr ions are metered and added in the form of Zr(NO3)4.5H2O. The product has the beneficial effects of high gradient, low residual voltage, large through-current capacity, small leakage current and stable aging performance.

Description

technical field [0001] The invention belongs to the field of materials, in particular to a method for preparing ZnO varistor ceramics with high gradient and low residual voltage characteristics by using Nd and Zr ion compound donor doping. Background technique [0002] ZnO varistors are made of ZnO as the main raw material, adding a small amount of Bi2O3, Sb2O3, MnO2, Cr2O3, Co2O3, and B2O3 as auxiliary components, and are prepared by ceramic sintering process. [0003] Because it is easy to manufacture, unresponsive to impurities, easy to manufacture, and economical, the use of high-voltage arresters has become the mainstream. Generally speaking, the lightning protection element using the former voltage non-linear resistor is made and used as the following sintered element. After mixing oxide powders such as zn0 bismuth (bi), antimony (sb), cobalt (co), manganese (mn), nickel (ni), and silicon (si), which are the main components, it is plasticized in a prescribed form such...

Claims

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Application Information

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IPC IPC(8): C04B35/453C04B35/622
CPCC04B35/453C04B35/622C04B2235/3224C04B2235/3241C04B2235/3267C04B2235/3275C04B2235/3293C04B2235/3294C04B2235/3298C04B2235/3418C04B2235/443C04B2235/6567C04B2235/96
Inventor 赵洪峰王昊梁温馨赵慧漆思怡王玉川杨兴
Owner XINJIANG UNIVERSITY