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Method for forming radio frequency device

A technology of radio frequency devices and oxide layers, which is applied in the fields of semiconductor devices, semiconductor/solid-state device manufacturing, electrical components, etc., and can solve problems such as large parasitic capacitances

Pending Publication Date: 2020-06-26
SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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Problems solved by technology

[0003] The purpose of the present invention is to provide a method for forming a radio frequency device to solve the problem of large parasitic capacitance in the radio frequency device in the prior art

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  • Method for forming radio frequency device

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Embodiment Construction

[0027] The method for forming the radio frequency device proposed by the present invention will be further described in detail below in conjunction with the accompanying drawings and specific embodiments. The advantages and features of the present invention will become clearer from the following description. It should be noted that all the drawings are in a very simplified form and use imprecise scales, and are only used to facilitate and clearly assist the purpose of illustrating the embodiments of the present invention.

[0028] The core idea of ​​the present application is to provide a method for forming a radio frequency device, by forming a first opening and a second opening in a semiconductor substrate; forming an oxide layer in the first opening and the second opening respectively, so that The surface of the oxide layer is lower than the surface of the semiconductor substrate; a polysilicon layer is formed on the oxide layer to form a source and a drain. That is, by fo...

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Abstract

The invention provides a method for forming a radio frequency device. The method comprises the following steps: forming a first opening and a second opening in a semiconductor substrate; forming oxidelayers in the first opening and the second opening respectively, wherein the surfaces of the oxide layers are lower than the surface of the semiconductor substrate; and forming polycrystalline silicon layers on the oxide layers to form a source electrode and a drain electrode. The oxide layers are formed between the semiconductor substrate and the polycrystalline silicon layers, and the semiconductor substrate is isolated from the polycrystalline silicon layers through the oxide layers, so that barriers are formed between the substrate and the polycrystalline silicon layers through the oxidelayers, and the parasitic capacitance between the polycrystalline silicon layers and the semiconductor substrate is reduced, namely, the parasitic capacitance of the source electrode and the drain electrode is reduced. Furthermore, the parasitic capacitance of the radio frequency device is reduced, and the performance of the radio frequency device is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a method for forming a radio frequency device. Background technique [0002] The radio frequency switching device is a device used for signal switching in the communication field. It has the advantages of simple structure, wide application range, low cost, low power consumption, easy installation, and high reliability. It can be widely used in carrier telephone switching, cable television signal switch, cable TV signal switch and other fields. When it is working, some areas are in the conduction state, and some areas are in the off state. Radio frequency devices are a device with a very good market. Especially with the wide application of communication technology, it will get more and more attention as a new type of power device. There are parasitic capacitances in radio frequency devices, and generally, low parasitic capacitances are required in radio frequency devices...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/336H01L29/78H01L29/08
CPCH01L29/66636H01L29/78H01L29/0847
Inventor 刘张李
Owner SHANGHAI HUAHONG GRACE SEMICON MFG CORP
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