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Magnetic tunnel junction, memory cell and magnetic random access memory

A technology of magnetic random access memory and magnetic tunnel junction, which is applied in the fields of magnetic field-controlled resistors, components of electromagnetic equipment, etc., and can solve the problems such as the temperature rise of magnetic tunnel junction.

Active Publication Date: 2020-06-26
BEIHANG UNIV
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Problems solved by technology

Although great progress has been made in the past few years, for current-induced magnetic switching, a current density of several megaamperes per square centimeter is still required to switch the magnetic tunnel junction, and the resulting increase in the temperature of the magnetic tunnel junction will cause many problems. question

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  • Magnetic tunnel junction, memory cell and magnetic random access memory
  • Magnetic tunnel junction, memory cell and magnetic random access memory

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Embodiment Construction

[0042] The following will clearly and completely describe the technical solutions in the embodiments of the present invention with reference to the accompanying drawings in the embodiments of the present invention. Obviously, the described embodiments are only some, not all, embodiments of the present invention. Based on the embodiments of the present invention, all other embodiments obtained by persons of ordinary skill in the art without making creative efforts belong to the protection scope of the present invention.

[0043] At present, the thermal stability of the magnetic tunnel junction cannot be solved, and there are deficiencies. In order to solve the deficiencies, the core idea of ​​the present invention is to add a layer of free layer phase transition on the basis of the original magnetic tunnel junction based on the spin transfer torque current. The adjustment layer (phase change layer) can control the resistance of the magnetic tunnel junction and the anisotropy fie...

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Abstract

The invention provides a magnetic tunnel junction, a storage unit and a magnetic random access memory. An adjusting layer (phase change layer) with a free layer for phase change is additionally arranged on the basis of an original magnetic tunnel junction based on spin transfer torque current. In the specific device, the phase change of the phase change layer is driven through external illumination, so the anisotropic field of the free layer is regulated and controlled, and finally, the regulation and control of the performance of the spin electronic device are realized. When light is externally applied, the phase change material (such as vanadium dioxide VO2) is subjected to phase change to generate resistance change. The illumination intensity of the adjusting layer can be regulated andcontrolled through light source control, so the resistance of the layer is ensured to be within a required range, and the performance of the device is improved.

Description

technical field [0001] The present invention relates to the technical field of magnetic random access memory, and more specifically, relates to a magnetic tunnel junction, a storage unit and a magnetic random access memory. Background technique [0002] Spintronics mainly studies the characteristics of the spin degree of freedom of electrons and its manipulation methods, and realizes a new generation of electronic devices by generating, regulating, transporting and detecting spin currents. After years of development, spintronic devices have attracted widespread interest from the scientific and industrial communities, and have important applications in many fields. [0003] In the field of spintronics research, the study of materials based on magnetic tunnel junctions and their physical effects has always been the focus of researchers. The core structure of a magnetic tunnel junction is a nano-multilayer film similar to a sandwich structure composed of two layers of ferromag...

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Application Information

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IPC IPC(8): H01L43/02H01L43/08
CPCH10N50/80H10N50/10
Inventor 林晓阳李燊尉国栋赵巍胜
Owner BEIHANG UNIV
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