A kind of preparation device of silicon carbide crystal block, silicon carbide crystal block and preparation method thereof
A preparation device and technology of silicon carbide, which is applied to the preparation device of silicon carbide crystal block, silicon carbide crystal block and its preparation field, can solve the problems of low efficiency of large particle silicon carbide, reduce graphitization, expand evaporation area, improve efficiency effect
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[0029] In a second aspect of the present invention, a method for preparing a silicon carbide crystal block is provided, comprising the following steps:
[0030] S1. Add the silicon carbide raw material into the graphite container. The graphite container is obtained by stacking a plurality of graphite sub-containers along the height direction of the graphite container. The multiple graphite sub-containers are stacked to form a plurality of accommodation chambers, at least two of which The silicon carbide raw material layer formed by the silicon carbide raw material is contained in the accommodating chamber of the graphite container;
[0031] S2. Place the graphite container containing the silicon carbide raw material in a graphite heater and heat to decompose and deposit the silicon carbide raw material to obtain a silicon carbide crystal block;
[0032]The thickness of the silicon carbide raw material layer in each of the sub-graphite containers containing the silicon carbide ...
Embodiment 1
[0049] The internal diameter of the sub-graphite container is 100mm, the internal height is 40mm, the side wall thickness is 5mm, the bottom wall thickness is 5mm; the sealing cover thickness is 5mm;
[0050] The inner diameter of the graphite crucible is 140 mm, the inner height is 170 mm, the side wall thickness is 15 mm, the bottom wall thickness is 25 mm, and the thickness of the crucible lid is 10 mm.
[0051] Lay 100g of silicon carbide raw material in the sub-graphite container to form a silicon carbide raw material layer with a thickness of 13 mm, repeat the above operation 3 times to obtain 3 sub-graphite containers containing the same silicon carbide raw material layer, and place the 3 sub-graphite containers along the height Directions are superimposed to obtain a graphite container, wherein the bottom wall of the upper sub-graphite container is the sealing cover of the lower sub-graphite container, that is, the bottom wall of the upper sub-graphite container is the ...
Embodiment 2
[0054] The internal diameter of the sub-graphite container is 100mm, the internal height is 70mm, the side wall thickness is 5mm, the bottom wall thickness is 5mm; the sealing cover thickness is 5mm;
[0055] The inner diameter of the graphite crucible is 140mm, the inner height is 170mm, the side wall thickness is 10mm, the bottom wall thickness is 30mm, and the thickness of the crucible lid is 10mm.
[0056] Lay 350g of silicon carbide raw material in the sub-graphite container to form a silicon carbide raw material layer with a thickness of 45 mm, repeat the above operation twice to obtain 2 sub-graphite containers containing the same silicon carbide raw material layer, and place the two sub-graphite containers along the height Directions are superimposed to obtain a graphite container, wherein the bottom wall of the upper sub-graphite container is the sealing cover of the lower sub-graphite container, that is, the bottom wall of the upper sub-graphite container is the top w...
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Abstract
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