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High-thermal-conductivity silicon nitride ceramic and preparation method thereof

A technology of silicon nitride ceramics and high thermal conductivity, applied in the field of ceramics, can solve the problem of low thermal conductivity of silicon nitride ceramics, and achieve the effects of good bonding effect, high green body strength and uniform structure

Inactive Publication Date: 2020-07-03
XIAN AOQIN NEW MATERIAL CO LTD +2
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] The purpose of the present invention is to provide a silicon nitride ceramic with high thermal conductivity and its preparation method, which solves the problem that the thermal conductivity of silicon nitride ceramics is not high at the present stage

Method used

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  • High-thermal-conductivity silicon nitride ceramic and preparation method thereof
  • High-thermal-conductivity silicon nitride ceramic and preparation method thereof
  • High-thermal-conductivity silicon nitride ceramic and preparation method thereof

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preparation example Construction

[0031] A silicon nitride ceramic with high thermal conductivity and a preparation method thereof, comprising the following steps:

[0032] Step 1, graded mixing 1, silicon nitride powder and alcohol are mixed, wherein the amount of silicon nitride powder added accounts for 90.2%-96.7% of the total solid raw material (silicon nitride and silicon nitride magnesium) quality, continue to add Overall solid raw material mass fraction 3.3%-9.8% magnesium silicon nitride, the mixing frequency in the horizontal mill is 41Hz, and the mixing time is 24h; continue to add binder PVB and additives (orthosilicic acid, n-octanoic acid, phosphoric acid and oil acid mixture), wherein the ratio of the mass of the binder to the mass of the silicon nitride powder is 1.4:98.6, and the ratio of the mass of the additive to the mass of the silicon nitride powder is 6.9:93.1. The mixing time was 24 h at a frequency of 50 Hz in a vertical mill. The mass ratio of orthosilicic acid, n-octanoic acid, phos...

Embodiment 1

[0041] Contains the following steps:

[0042] Step 1, graded mixing 1, mix silicon nitride powder and alcohol with a mass ratio of 1:2.4, the mixing frequency in a horizontal grinder is 41Hz, and the mixing time is 24h; continue to add PVB and the above-mentioned silicon nitride The powder mass ratio is 0.6:99.4, the frequency in the vertical mill is 50Hz, and the mixing time is 24h.

[0043] Step 2, spray granulation and pressure molding, spray granulation of the mixture produced by graded mixing 2, after granulation, press it into a block with a pressure of 50MPa, then put it into a vacuum bag for vacuuming, and put it in a cold storage tank after pumping. Add a pressure of 200MPa to the static press, hold the pressure for 2min, release the pressure to 140MPa, hold the pressure for 1min, release the pressure to 70MPa, and hold the pressure for 40s.

[0044] Step 3, drying and degreasing: put the biscuit in Step 3 into an oven, and dry at 80°C for 12 hours;

[0045] Step 4,...

Embodiment 2

[0047] Contains the following steps:

[0048] Step 1, graded mixing 1, mix silicon nitride powder and alcohol with a mass ratio of 1:2.4, the mixing frequency in a horizontal grinder is 41Hz, and the mixing time is 24h; continue to add PVB and the above-mentioned silicon nitride The powder mass ratio is 1.0:99.0, the frequency in the vertical mill is 50Hz, and the mixing time is 24h.

[0049] Step 2, spray granulation and pressure molding, spray granulation of the mixture produced by graded mixing 2, after granulation, press it into a block with a pressure of 50MPa, then put it into a vacuum bag for vacuuming, and put it in a cold storage tank after pumping. Add a pressure of 200MPa to the static press, hold the pressure for 2min, release the pressure to 140MPa, hold the pressure for 1min, release the pressure to 70MPa, and hold the pressure for 40s.

[0050] Step 3, drying and degreasing: put the biscuit in Step 3 into an oven, and dry at 80°C for 12 hours;

[0051] Step 4,...

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Abstract

The invention provides a high-thermal-conductivity silicon nitride ceramic and a preparation method thereof. The high-thermal-conductivity silicon nitride ceramic is prepared from, by mass, 90.2%-96.7% of silicon nitride powder and 3.3%-9.8% of magnesium silicon nitride. The preparation method comprises the following steps: mixing silicon nitride powder, a solvent, magnesium silicon nitride, a binder and an additive to obtain a mixture, carrying out spray granulation on the mixture, then carrying out compression molding to obtain a biscuit, drying the biscuit, degreasing the biscuit, performing air pressure sintering on the degreased biscuit, wherein the highest temperature of the air pressure sintering is lower than 1750 DEG C, carrying out hot isostatic pressing sintering on the siliconnitride ceramic subjected to air pressure sintering, and carrying out annealing heat treatment on the silicon nitride ceramic subjected to hot isostatic pressing sintering. Oxygen-free magnesium silicon nitride is added, high densification of a ceramic structure is promoted through air pressure-hot isostatic pressing sintering, then crystal grains continue to grow abnormally through a heat treatment method in the second step, and the heat conductivity of the silicon nitride ceramic is improved.

Description

technical field [0001] The invention belongs to the field of ceramics, and relates to a silicon nitride ceramic with high thermal conductivity and a preparation method thereof. Background technique [0002] In recent years, semiconductor devices have developed rapidly along the direction of high power, high frequency, and integration. The heat generated by the operation of semiconductor devices is the key factor causing the failure of semiconductor devices, and the thermal conductivity of the insulating substrate is the key to affecting the overall heat dissipation of semiconductor devices. In addition, such as in the fields of electric vehicles and high-speed rail, semiconductor devices often face complex mechanical environments such as bumps and vibrations during use, which imposes strict requirements on the mechanical reliability of the materials used. Silicon nitride ceramics are comprehensive performance The best structural ceramic material. The theoretical thermal co...

Claims

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Application Information

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IPC IPC(8): C04B35/584C04B35/645
CPCC04B35/584C04B35/6455C04B2235/3852C04B2235/662C04B2235/483C04B2235/9607C04B2235/96C04B2235/77
Inventor 管晶宋索成管甲锁李世佳
Owner XIAN AOQIN NEW MATERIAL CO LTD
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