Array panel and manufacturing method thereof
A technology of an array panel and a manufacturing method, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc., can solve problems such as affecting the stability of TFTs, and achieve the effects of improving stability, reducing energy levels, and low contact resistance.
Active Publication Date: 2022-04-05
TCL CHINA STAR OPTOELECTRONICS TECH CO LTD
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Problems solved by technology
However, when this method is used for processing, other impurity gases are often introduced, which affects the stability of TFT
Method used
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[0038] In order to make the purpose, technical solution and advantages of the present invention clearer, the present invention will be further described in detail below in conjunction with the accompanying drawings, please refer to the drawings in the accompanying drawings, wherein the same component symbols represent the same components, the following description is Based on the particular embodiment of the invention shown, it should not be construed as limiting the invention to other embodiments not detailed herein. The word "embodiment" as used in this specification means an example, instance or illustration. Furthermore, as used in this specification and the appended claims, the article "a" or "an" may generally be construed as "one or more" unless specified otherwise or clear from the context in the singular.
[0039] Such as figure 1 As shown, an embodiment of the present invention provides a method for manufacturing an array panel, the method comprising:
[0040] S1: ...
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Abstract
The invention discloses an array panel and a manufacturing method thereof, comprising: forming a first device board, the first device board including a substrate layer, a buffer layer, a semiconductor layer, a gate insulating layer and a gate; forming an oxide material layer and the conductorized part of the semiconductor, wherein the oxide material layer covers the first device board, and the conductorized part corresponds to the uncovered part of the semiconductor layer; a second device is formed on the oxide material layer A device board, the second device board includes a source, a drain, a planarization layer, a pixel definition layer, an anode, an organic light-emitting layer, a cathode, and an encapsulation layer, wherein the source and the drain are connected to the conductor part of the electrical connection. The invention can improve the stability of the thin film transistor in the array panel.
Description
technical field [0001] The present invention relates to the field of display technology, in particular to an array panel and a manufacturing method thereof. Background technique [0002] AMOLED (Active-matrix organic light-emitting diode, active-matrix organic light-emitting diode) display panel has become an outstanding representative of the next-generation display technology due to its advantages of thinness, flexibility, and wearability. [0003] In the display panel industry, with the current large-scale display industry, the demand for high resolution is becoming stronger and stronger, and higher requirements are put forward for the charging and discharging of active layer semiconductor devices. IGZO (Indium Gallium Zinc Oxide, indium gallium zinc oxide) is an amorphous oxide containing indium, gallium and zinc, which has high mobility, and the carrier mobility is 20 to 30 times that of amorphous silicon, which can greatly Improve the charge and discharge rate of TFT (...
Claims
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IPC IPC(8): H01L21/77H01L27/12H01L27/32
CPCH01L21/77H01L27/127H01L27/1225H10K59/12
Inventor 刘大江李金明
Owner TCL CHINA STAR OPTOELECTRONICS TECH CO LTD