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Preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in semiconductor/solid-state device manufacturing, electrical components, electric solid-state devices, etc., can solve problems affecting the luminous efficiency of quantum dot light-emitting diodes, etc.

Active Publication Date: 2020-07-07
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a quantum dot light-emitting diode, aiming to solve the problem that the residual solvent in the quantum dot light-emitting layer affects the luminous efficiency of the quantum dot light-emitting diode

Method used

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  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode

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preparation example Construction

[0013] as attached figure 1 As shown, the embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0014] S10 provides a substrate, the substrate is provided with a quantum dot light-emitting layer;

[0015] S20 depositing a solution on the surface of the quantum dot luminescent layer, and drying it after standing until the quantum dot luminescent layer is soaked by the solution, the solution includes a host solvent and a solute dissolved in the host solvent, the The polarity of the solute is less than or equal to the polarity of the host solvent, and the solution does not dissolve the quantum dots.

[0016] In the method for preparing a quantum dot light-emitting diode provided in an embodiment of the present invention, a solution is deposited on the surface of the quantum dot light-emitting layer, wherein the solution includes a host solvent and a solute dissolved in the host solvent, and the p...

Embodiment 1

[0041] A method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0042] A glass substrate provided with an anode (ITO) is provided, a hole injection layer (PEDOT:PSS) is prepared on the anode, a hole transport layer (TFB) is prepared on the side of the hole injection layer away from the anode, and a hole transport layer (TFB) is prepared on the hole transport layer Quantum dot light-emitting layer (CdSe / ZnS QDs) is prepared on the side away from the anode;

[0043] Deposit an isopropanol solution with a polyacrylic acid content of 1 ppm on the surface of the quantum dot light-emitting layer away from the anode, and heat it to 120° C. to remove after standing for 100 minutes, wherein the weight average molecular weight of the polyacrylic acid is about 2000;

[0044] An electron transport layer (ZnO) is prepared on the surface of the quantum dot luminescent layer away from the anode, an electron injection layer (LiF) is prepared on the surface ...

Embodiment 2

[0046] A method for preparing a quantum dot light-emitting diode, which differs from Example 1 in that an isopropanol solution with a polyacrylic acid content of 10 ppm is deposited on the surface of the quantum dot light-emitting layer away from the anode.

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Abstract

The invention provides a preparation method of a quantum dot light-emitting diode, which comprises the following steps: providing a substrate provided with a bottom electrode, and preparing a quantumdot light-emitting layer on the bottom electrode; depositing a solution on the surface of the quantum dot light-emitting layer, standing until the quantum dot light-emitting layer is infiltrated, andthen performing drying treatment, the solution comprising a main solvent and a solute dissolved in the main solvent, the polarity of the solute being less than or equal to the polarity of the main solvent, and the solution not dissolving quantum dots; and preparing a top electrode on the surface, deviating from the bottom electrode, of the quantum dot light-emitting layer processed by the mixed solvent, wherein the bottom electrode is an anode, and the top electrode is a cathode, or the bottom electrode is a cathode, and the top electrode is an anode.

Description

technical field [0001] The invention belongs to the field of display technology, in particular to a preparation method of a quantum dot light-emitting diode. Background technique [0002] Quantum dots, also known as semiconductor nanocrystals, have three-dimensional dimensions in the nanometer range (1-100nm), and are a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good photostability, narrow half-peak width, wide excitation spectrum and controllable emission spectrum, and are very suitable as light-emitting materials for light-emitting devices. In recent years, quantum dot fluorescent materials are widely used in the field of flat-panel displays due to their advantages of high light color purity, adjustable luminous color, and long service life, and have become a promising next-generation display and solid-state lighting source. Quantum Dot Lig...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/40H10K50/115H10K71/00
Inventor 张节向超宇
Owner TCL CORPORATION