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Preparation method of quantum dot light-emitting diode

A quantum dot light-emitting and diode technology, which is applied in the direction of luminescent materials, chemical instruments and methods, semiconductor/solid-state device manufacturing, etc., can solve the problems affecting the luminous efficiency and service life of quantum dot light-emitting diodes

Active Publication Date: 2021-05-28
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The purpose of the present invention is to provide a method for preparing a quantum dot light-emitting diode, which aims to solve the problem of impurities (impurities introduced by the quantum dot itself and / or impurities formed by solvent residues) in the quantum dot light-emitting layer when preparing a quantum dot light-emitting diode. , problems that affect the luminous efficiency and service life of quantum dot light-emitting diodes

Method used

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  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode
  • Preparation method of quantum dot light-emitting diode

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preparation example Construction

[0013] as attached figure 1 As shown, an embodiment of the present invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0014] S10 provides a substrate on which a quantum dot light-emitting layer is arranged;

[0015] S20, the substrate is immersed in a solvent system for ultrasonic treatment, the solvent system includes a main solvent and a doping solvent dissolved in the main solvent, and the polarity of the doping solvent is smaller than that of the main solvent, And the host solvent is an organic solvent that does not dissolve quantum dots.

[0016] In the method for preparing a quantum dot light-emitting diode provided by the embodiment of the present invention, after the quantum dot light-emitting layer is prepared, the quantum dot light-emitting layer is immersed in a solvent system for ultrasonic treatment. Wherein, the solvent system includes a main solvent and a doping solvent dissolved in the main solvent,...

Embodiment 1

[0042] A preparation method of a quantum dot light-emitting diode, comprising the following steps:

[0043] A substrate provided with an anode (ITO) is provided on which a hole injection layer (PEDOT:PSS) is prepared, a hole transport layer (TFB) is prepared on the side of the hole injection layer facing away from the anode, and a hole transport layer (TFB) is prepared on the side of the hole injection layer facing away from the anode. A quantum dot light-emitting layer (CdSe / ZnS QDs) was prepared on the anode side;

[0044] The quantum dot light-emitting layer is immersed in a 1-butanol solution with a 1-chlorobutane content of 1 ppm, and ultrasonically treated at a power of 20 kHz for 100 min;

[0045] An electron transport layer (ZnO) is prepared on the surface of the ultrasonically treated quantum dot light-emitting layer away from the anode, an electron injection layer (LiF) is prepared on the surface of the electron transport layer away from the anode, and the electron i...

Embodiment 2

[0047] A preparation method of a quantum dot light-emitting diode, which is different from Example 1 in that the quantum dot light-emitting layer is immersed in a 1-butanol solution with a 1-chlorobutane content of 100 ppm, and ultrasonically treated at a power of 20 kHz. 100min.

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Abstract

The invention provides a method for preparing a quantum dot light-emitting diode, comprising the following steps: providing a substrate, the upper surface of which is provided with a quantum dot light-emitting layer; immersing the substrate in a solvent system for ultrasonic treatment, the solvent system comprising: A host solvent and a doping solvent dissolved in the host solvent, the polarity of the doping solvent is smaller than that of the host solvent, and the host solvent is an organic solvent that does not dissolve quantum dots.

Description

technical field [0001] The invention belongs to the technical field of display, and in particular relates to a preparation method of a quantum dot light-emitting diode. Background technique [0002] Quantum dots (quantum dots), also known as semiconductor nanocrystals, whose three-dimensional size is in the nanometer range (1-100nm), are a kind of nanoparticle theory between bulk materials and molecules. Quantum dots have excellent optical properties such as high quantum yield, large molar extinction coefficient, good photostability, narrow half-peak width, broad excitation spectrum and controllable emission spectrum, etc., and are very suitable as luminescent materials for light-emitting devices. In recent years, quantum dot fluorescent materials have been widely used in the field of flat panel displays due to their high light color purity, adjustable emission color, and long service life. Quantum Dot Light Emitting Diodes (QLED) is a light-emitting device based on quantum...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/56
CPCH10K71/15H10K71/00C09K11/565C09K11/883H10K71/12H10K50/115H10K50/15H10K50/17H10K50/18H10K2102/00
Inventor 张节向超宇
Owner TCL CORPORATION