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SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus

A single crystal, crucible technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of temperature difference, use, ineffective utilization of SiC raw materials, etc.

Active Publication Date: 2020-07-17
RESONAC CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In a crucible having such a temperature distribution, the sublimation gas generated near the crucible wall is cooled at the center of the crucible to precipitate SiC, and the SiC raw material may not be effectively utilized.
In particular, in a large crucible, the temperature difference between the wall side and the center tends to increase, so SiC tends to precipitate at the center
In addition, SiC precipitated inside the crucible is in a different state from the original SiC raw material, and cannot be reused as a SiC raw material in this state.

Method used

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  • SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus
  • SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus
  • SiC single crystal growth crucible, SiC single crystal manufacturing method, and SiC single crystal manufacturing apparatus

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0087] Figure 7 is a schematic cross-sectional view showing the SiC single crystal manufacturing apparatus used in the simulation of Example 1. FIG.

[0088] The SiC single crystal production apparatus 41 includes a SiC single crystal growth crucible 10 and a heater 50 . The SiC single crystal manufacturing apparatus 41 has a symmetrical structure around the central axis of the SiC single crystal growth crucible 10 . The crucible 10 for SiC single crystal growth is figure 2 The crucible 10b for SiC single crystal growth is shown. The filling height of the SiC raw material 1 filled in the raw material storage part 20 b was set to 180 mm. The arrangement position of the heater 50 was set to a position where the height of the narrowing start position L of the narrowing part 22b with respect to the heating center H was 20 mm above. That is, the heating center H is a height position of 160 mm from the lowermost part of the raw material.

[0089] In order to reduce the calcul...

Embodiment 2

[0092] In addition to setting the crucible 10 for SiC single crystal growth as Figure 4 The simulation was performed under the same conditions as in Example 1 except for the illustrated SiC single crystal growth crucible 10c. show the result in Figure 8 .

Embodiment 3

[0094] In addition to setting the crucible 10 for SiC single crystal growth as Figure 5 The simulation was performed under the same conditions as in Example 1 except for the illustrated SiC single crystal growth crucible 10d. show the result in Figure 8 .

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Abstract

The present invention relates to a SiC single crystal growth crucible, a SiC single crystal manufacturing method using same, and a SiC single crystal manufacturing apparatus. The SiC single crystal growth crucible includes a raw material accommodation portion which accommodates a SiC raw material; and a seed crystal support portion which supports a seed crystal disposed on an upper portion of theraw material accommodation portion, wherein the raw material accommodation portion has a tapered portion an inner surface of which is tapered off downward.

Description

[0001] This application claims priority based on Japanese Patent Application No. 2019-002576 for which it applied to Japan on January 10, 2019, and uses the content here. technical field [0002] The present invention relates to a crucible for growing a SiC single crystal, a method for producing a single crystal of SiC using the crucible for growing a single crystal of SiC, and an apparatus for producing a single crystal of SiC. Background technique [0003] Compared with silicon (Si), silicon carbide (SiC) has an order of magnitude larger insulation breakdown electric field and three times larger band gap. In addition, SiC has characteristics such as a thermal conductivity about three times higher than that of Si. Therefore, SiC is expected to be applied to power devices, high-frequency devices, high-temperature operating devices, and the like. [0004] As one of methods for producing SiC single crystals, the sublimation method is well known. The sublimation method is a m...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/36
CPCC30B23/00C30B29/36C30B23/066C30B35/002C23C14/243C23C14/0635
Inventor 藤川阳平
Owner RESONAC CORPORATION
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