Gan device based on surface treatment and oxidation process and its preparation method

Abstract

The invention provides a GaN device based on a surface treatment and oxidation process and a preparation method of the GaN device. The preparation method comprises the steps of providing a semiconductor substrate; forming an epitaxial structure; forming a device isolation structure; forming a source ohmic electrode and a drain ohmic electrode; and forming a natural oxide layer and forming a gate-oxide contact layer through in-situ deposition. The natural oxide layer is formed on the surface of the epitaxial structure and can be used as a passivation layer; the surface of the epitaxial structure is cleaned at the same time; and the residual photoresist layer and unnecessary carbon, organic matter and the like in the technological process can be effectively removed. The gate oxide dielectriclayer is formed by in-situ deposition, so that the surface pollution risk caused by exposing the surface of the device in air can be avoided, and the film forming quality of the gate oxide dielectriclayer is facilitated. Both the natural oxide layer and the gate oxide dielectric layer can be formed based on the same process chamber and ozone, and an ALD chemical method using O3 as oxygen sourcegas of the gate oxide dielectric layer can reduce hydroxyl impurities and residual hydrogen and reduce in-vivo and interface traps of the oxide layer.

Description

technical field [0001] The invention belongs to the field of semiconductor power electronic devices, in particular to a GaN device based on surface treatment and oxidation technology and a preparation method thereof. Background technique [0002] Today, human production and life are inseparable from electricity, and with the improvement of people's awareness of energy conservation, power semiconductor devices with high conversion efficiency have become a research hotspot at home and abroad. Power semiconductor devices are widely used, such as household appliances, power converters and industrial controls, etc. Different power semiconductor devices are used under different rated voltages and currents. High Electron Mobility Transistor (HEMT, High Electron Mobility Transistor) is a hot spot of development at home and abroad, and has made breakthroughs in many fields, especially in high temperature, high power and high frequency, which has broad application prospects. [0003]...

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Problems solved by technology

[0005] In view of the shortcomings of the prior art described above, the purpose of the present invention is to provide a GaN device based on surface treatment and oxidation process and its preparation method, which is used to solve the problems of optimization of gate dielectric material performance and leakage current in the prior art. question

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