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Homojunction perovskite photoelectric detector and preparation method and application thereof

A photodetector and perovskite technology, applied in the field of photodetectors, can solve problems such as insufficient response speed and external quantum efficiency, inability to exert material performance, low external quantum efficiency, etc., achieve shortened response time, improved EQE value, The effect of improving the response speed

Pending Publication Date: 2020-07-17
SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, simply introducing perovskite materials into the traditional device structure, the narrow-band multispectral photodetectors prepared currently have difficulties such as low external quantum efficiency (EQE), slow response speed, and insufficient bandwidth, which cannot give full play to the excellent performance of the material.
[0004] CN209785975U discloses a kind of perovskite photodetector, and it comprises substrate, bottom electrode, light absorbing layer, top layer electrode and optical modulation layer that are formed successively from bottom to top, and described optical modulation layer comprises the dielectric layer of lower layer and upper layer The light reflection film layer, the dielectric layer is selected from Si, ZnO, ZnS, Si 3 N 4 、Al 2 o 3 , SiO 2 and TiO 2 A kind of in, described light reflection film layer is selected from a kind of in Au, Ag, Al, Cu, Ni, Pt, Ti, TiN and ZrN; CN109841703A discloses a kind of all-inorganic perovskite photodetector and its The preparation method, the all-inorganic perovskite photodetector includes a transparent conductive positive electrode, an ultra-thin aluminum oxide layer, an all-inorganic perovskite light absorption layer, an electron transport layer and a metal negative electrode, and the photodetectors described in the above schemes all exist The problem of insufficient response speed and external quantum efficiency

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  • Homojunction perovskite photoelectric detector and preparation method and application thereof

Examples

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Embodiment 1

[0093] The transparent conductive substrate in the homojunction perovskite photodetector described in the present embodiment is FTO transparent conductive glass, and its square resistance is 10Ω, and transmittance is 95%; The electron transport layer comprises the TiO that thickness is 30nm 2 Dense layer and TiO with a thickness of 200nm 2 Mesoporous layer; N-type perovskite film (precursor PbX 2 and CH 3 NH 3 The molar ratio of X is 1.05:1) and the thickness is 480nm, the P-type perovskite film (PbX 2 with CH 3 NH 3 The molar ratio of X is 0.9) and the thickness is 60nm; the ratio of the thickness of the N-type perovskite film to the P-type perovskite film is 8, the metal electrode is an Au electrode, and the thickness of the gold electrode is 80nm .

[0094] The preparation method of the homojunction perovskite photodetector described in this embodiment comprises the following steps:

[0095] (1) Spin-coat a 1-butanol solution of di(acetylacetonato)diisopropyl titanat...

Embodiment 2

[0101] The transparent conductive substrate in the homojunction perovskite photodetector described in the present embodiment is FTO transparent conductive glass, and its sheet resistance is 25Ω, and transmittance is 80%; The electron transport layer comprises the TiO that thickness is 50nm 2 Dense layer and TiO with a thickness of 200nm 2 Mesoporous layer; N-type perovskite film (precursor PbX 2 and CH 3 NH 3 The molar ratio of X is 1.15:1) and the thickness is 500nm, the P-type perovskite film (precursor PbX 2 with CH 3 NH 3 The molar ratio of X is 0.92) and the thickness is 80nm, the ratio of the thickness of the N-type perovskite film to the P-type perovskite film is 6.25, the metal electrode is an Ag electrode, and the thickness of the Ag electrode is 100nm .

[0102] The preparation method of the homojunction perovskite photodetector described in this embodiment comprises the following steps:

[0103] (1) Spin-coat a 1-butanol solution of bis(acetylacetonato)diisop...

Embodiment 3

[0109] The difference between this embodiment and Example 1 is that the thickness of the N-type perovskite film is 480nm, the thickness of the P-type perovskite film is 80nm, and the thickness of the N-type perovskite film and the P-type perovskite film The ratio is 6, and other conditions are identical with embodiment 1.

[0110] The difference between the preparation method of the homojunction perovskite photodetector in this example and that in Example 1 is that the amount of raw materials used in the preparation process of the N-type perovskite film and the P-type perovskite film is adjusted so that the structure meets the above-mentioned Requirement, other conditions are compared with embodiment 1 and are exactly the same.

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Abstract

The invention relates to a homojunction perovskite photoelectric detector and a preparation method and application thereof. The homojunction perovskite photoelectric detector comprises an N-type perovskite thin film and a P-type perovskite thin film which are arranged adjacently. W, wherein the an electron transport layer and the a transparent conductive substrate are sequentially arranged on oneside, back to the P-type perovskite thin film, of the N-type perovskite thin film; wherein, and a the hole transport layer and the a metal electrode are sequentially arranged on the side, back to theN-type perovskite thin film, of the P-type perovskite thin film. The photoelectric detector is based on optimization of homojunction perovskite, so that a built-in electric field is formed in the photoelectric detector, the built-in electric field and an external electric field are the same in direction and act together, separation of photo-induced electron hole pairs is enhanced, carrier transport is accelerated, and the external quantum efficiency and the response speed of the photoelectric detector are improved.

Description

technical field [0001] The invention belongs to the technical field of photodetectors, and relates to a homojunction perovskite photodetector and its preparation method and application. Background technique [0002] Photodetectors are currently important optoelectronic components in the optoelectronic information industry, and are often used in sensing, detection and imaging. At present, traditional photodetector materials such as Si, Ge, and InGaAs have disadvantages such as complex preparation process, high cost, and non-flexibility. [0003] In recent years, perovskite materials have been widely used in the field of optoelectronic devices due to their high absorption coefficient, wide band coverage from ultraviolet to near infrared, high carrier mobility, and micron-scale diffusion length. application. However, how to further design the device structure and give full play to the excellent photoelectric properties of perovskite materials to meet the needs of various dete...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/0248H01L31/18H01L31/103H01L31/0256
CPCH01L31/0248H01L31/103H01L31/18H01L2031/0344Y02P70/50
Inventor 吴丹王恺刘皓宸李文辉昂科科觉
Owner SOUTH UNIVERSITY OF SCIENCE AND TECHNOLOGY OF CHINA
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