Preparation method of standard sub-cell of four-junction gallium arsenide solar cell

Abstract

The invention discloses a preparation method of a standard sub-cell of a four-junction gallium arsenide solar cell, and belongs to the technical field of solar cells. The method is characterized by comprising the following steps: S1, positively growing the four-junction gallium arsenide solar cell by adopting a metal organic chemical vapor deposition technology, and sequentially growing a 0.67 eVGe cell, a 1.1 eV InGaAs cell, a 1.5 eV AlGaAs cell and a 1.95 eV AlGaInP cell on a germanium substrate; S2, preparing a 0.67 eV Ge standard sub-cell on the basis of the whole four-junction gallium arsenide solar cell; S3, preparing a 1.1 eVInGaAs standard sub-cell on the basis of the whole four-junction gallium arsenide solar cell; S4, preparing a 1.5 eV AlGaAs standard sub-cell on the basis of the whole four-junction gallium arsenide solar cell; and S5, preparing a 1.95 eVAlGaInP standard sub-cell on the basis of the whole four-junction gallium arsenide solar cell.

Description

technical field [0001] The invention belongs to the technical field of solar cells, and in particular relates to a preparation method of a standard sub-cell of a four-junction gallium arsenide solar cell. Background technique [0002] In the design stage of the solar cell array of the aerospace vehicle, the design parameters are mainly based on the test data of the solar cells. The solar cell array is usually composed of a large number of solar cell cells, and the slight error in the test results of the electrical performance of the solar cell cells will affect the solar cells. The design and development of battery arrays have a serious impact. If the test result is too high, the actual output power of the solar cell array will not meet the design requirements, resulting in insufficient power supply; if the test result is too low, it will lead to an increase in the area, weight and cost of the solar cell array, resulting in a waste of resources. Accurately testing the elect...

AI Technical Summary

Problems solved by technology

On the one hand, this method requires four epitaxy processes, which is complex and costly. On the other hand, there is always a difference between the sub-cell structure grown separately and the sub-cell structure grown as a whole of the four-junction cell, resulting in a difference in spectral response between the two.

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