A capacitance detection unit, a charge pump circuit and a nonvolatile memory

Abstract

An embodiment of the present invention provides a capacitance detection unit, a charge pump circuit, and a nonvolatile memory. The capacitance detection unit includes: a capacitance to be measured, a current source supply module, a detection selection module, a control module, a first P-type field effect transistor, The second P-type field effect transistor, the first N-type field effect transistor, the first inverter, and the detection voltage input terminal. The embodiment of the present invention can be applied to capacitance sampling in non-volatile memory, and the capacitance detection unit can be selected to be in the capacitance detection state according to the control of the control module. In the capacitance detection state, the current source supply module can be used as the detection selection module , The second P-type FET and the first N-type FET provide a stable current, select the power leakage detection or ground leakage detection of the capacitance to be measured through the detection selection module, and pass the control module according to the flipping time interval of the detection signal By detecting the leakage current of the capacitor under test, the embodiment of the present invention can realize the detection of the capacitor under test at any time.

Description

technical field [0001] The invention relates to the technical field of memory, in particular to a capacitance detection unit, a charge pump circuit and a nonvolatile memory. Background technique [0002] In non-volatile memories, capacitive devices are usually provided. [0003] In the prior art, the capacitive device is usually subjected to a factory test, and if the capacitive device meets the requirements during the factory test, it is considered that the capacitive device can always be used in the non-volatile memory. [0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: the capacitor device will produce leakage and other phenomena as it is used, and the leakage may cause errors in the processing logic in the non-volatile memory, while the existing Capacitive devices in the technology have been integrated or welded with the circuit board, and the capac...

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Problems solved by technology

[0004] However, the inventor found in the process of studying the above-mentioned technical solution that the above-mentioned technical solution has the following defects: the capacitor device will produce leakage and other phenomena as it is used, and the leakage may cause errors in the processing logic in the non-volatile memory, while the existing Capacitive devices in the technology have been integrated or welded with the circuit board, and the capacitive devices cannot be tested

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