High-flux low-temperature plasma discharge device and method for decomposing hydrogen sulfide
A low-temperature plasma and discharge device technology, applied in the field of plasma chemistry, can solve the problems of low hydrogen sulfide conversion rate, high energy consumption, and inability to achieve large flow rates
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Embodiment 1
[0119] use figure 1 The shown device performs hydrogen sulfide decomposition reaction, and the specific structure and structural parameters of the low-temperature plasma discharge device are as follows:
[0120] The device includes:
[0121] a first cavity, the first cavity is respectively provided with a first inlet and a first outlet;
[0122] High-voltage electrodes, the high-voltage electrodes are arranged in the first cavity, and the high-voltage electrodes are arranged in the first cavity with 5 layers; in each layer structure containing the high-voltage electrodes, the high-voltage electrodes are The number is 7, each of the high-voltage electrodes is parallel to each other, and there is a gap between two adjacent high-voltage electrodes. The material for forming the high-voltage electrodes is a hollow stainless steel metal tube, and the dimensions of each of the high-voltage electrodes are the same. ;
[0123] A ground electrode, the ground electrode is arranged in ...
Embodiment 2
[0136] This embodiment adopts figure 2 The shown device performs hydrogen sulfide decomposition reaction, and the specific structure and structural parameters of the discharge device are as follows:
[0137] The device includes:
[0138] a first cavity, the first cavity is respectively provided with a first inlet and a first outlet;
[0139] High-voltage electrodes, the high-voltage electrodes are arranged in the first cavity, and the high-voltage electrodes are arranged in the first cavity with 5 layers; in each layer structure containing the high-voltage electrodes, the high-voltage electrodes are The number is 7, each of the high-voltage electrodes is parallel to each other, and there is a gap between two adjacent high-voltage electrodes, the material for forming the high-voltage electrodes is a hollow graphite tube, and the dimensions of each of the high-voltage electrodes are the same;
[0140] A ground electrode, the ground electrode is arranged in the first cavity, a...
Embodiment 3
[0153] This embodiment uses a discharge device similar to that of Embodiment 1, the difference is that the barrier medium in the discharge device of this embodiment is arranged on the outer surfaces of the high voltage electrode and the ground electrode, that is, a double dielectric barrier discharge.
[0154] And the gaps between two adjacent high-voltage electrodes and two adjacent ground electrodes are equal, and the gap between two adjacent layer structures is 1.2 times the gap between two adjacent high-voltage electrodes, L 2 The ratio to the thickness D1 of the blocking medium is 15:1;
[0155] The size of each of the high-voltage electrodes is the same as that of each of the ground electrodes, and the ratio of diameter to length is 1:130;
[0156] L 2 with the length L of the discharge tube 3 The ratio between them is 1:300;
[0157] The volume of the first cavity of the low temperature plasma discharge device of this embodiment is 3.2L.
[0158] H is introduced in...
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