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High-performance transparent conductive film and preparation method and application thereof

A technology of transparent conductive film and conductive film, which is applied in the direction of equipment for manufacturing conductive/semiconductive layers, cable/conductor manufacturing, conductive layers on insulating carriers, etc., and can solve complex processes, decreased transmittance, and high toxicity etc. to achieve the effect of high repeatability, low roughness and simple operation

Active Publication Date: 2020-07-24
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among the above-mentioned conductive films, the ITO film contains In element, which is a rare element and In compounds are highly toxic, so the ITO conductive film is expensive and not conducive to environmental protection.
In addition, the ITO thin film requires high temperature annealing to achieve good performance, which has higher requirements for the glass substrate of the canopy, further increasing the cost
For the metal film, within a certain thickness range, it is both transparent and conductive, and its resistivity is lower than that of the ITO film. However, when the film thickness increases, its transmittance decreases significantly. It is difficult for a single metal film to meet high transmittance at the same time. , low resistance requirements
In the above patents, the multi-layer structure is adopted, the thickness is relatively thick, and the process is complicated

Method used

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  • High-performance transparent conductive film and preparation method and application thereof
  • High-performance transparent conductive film and preparation method and application thereof
  • High-performance transparent conductive film and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0031] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0032] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 1500, and a high-performance transparent conductive film is obtained.

Embodiment 2

[0034] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0035] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0036] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 2250, and a high-performance transparent conductive film is obtained.

Embodiment 3

[0038] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0039] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0040] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 3000, and a high-performance transparent conductive film is obtained.

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Abstract

The invention belongs to the field of conductive film materials, and discloses a high-performance transparent conductive film and a preparation method and application thereof. The preparation method comprises the steps of cleaning and drying a transparent substrate, and depositing a GZO conductive film through pulse laser at room temperature to obtain the high-performance transparent conductive film. According to the invention, GZO is used as a conductive film material, so that the conductive film is green and environment-friendly; a single-layer GZO film is adopted, so that the process is simple; and the conductive film is prepared through pulse laser deposition without annealing treatment, so that the cost is effectively reduced. The obtained GZO conductive film has the advantages of high transmittance, low roughness and low resistance, and can be used for shielding of electromagnetic devices and equipment, such as warplane canopies, naval vessel portholes and the like.

Description

technical field [0001] The invention relates to the field of conductive thin film materials, and specifically relates to a high-performance transparent conductive thin film and its preparation method and application. Background technique [0002] Many electromagnetic devices and equipment, especially military electromagnetic devices and equipment, can emit or reflect electromagnetic signals, and their anti-interference and shielding capabilities have become very important indicators. For example, fighter jets, also known as fighter jets, are used to eliminate enemy aircraft and other aircraft Aviation type air strike weapons of military aircraft. Since the inside of the cockpit of a fighter jet is a cavity structure, each component is a large source of reflection. After the external electromagnetic wave is injected into the cockpit, it is easy to reflect multiple times and then exit the cockpit multiple times, forming a cavity reflection effect (similar to a corner reflecto...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01B13/00H01B5/14C23C14/28C23C14/08
CPCC23C14/086C23C14/28H01B5/14H01B13/0026
Inventor 姚日晖李晓庆宁洪龙符晓陈俊龙张旭梁宏富梁志豪卢宽宽彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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