A kind of high-performance transparent conductive film and its preparation method and application

A technology of transparent conductive film and conductive film, which is applied in equipment for manufacturing conductive/semiconductive layer, cable/conductor manufacturing, conductive layer on insulating carrier, etc., which can solve complex process, thick thickness and decreased transmittance and other problems, to achieve the effect of high repeatability, cost reduction, and low roughness

Active Publication Date: 2021-09-21
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Among the above-mentioned conductive films, the ITO film contains In element, which is a rare element and In compounds are highly toxic, so the ITO conductive film is expensive and not conducive to environmental protection.
In addition, the ITO thin film requires high temperature annealing to achieve good performance, which has higher requirements for the glass substrate of the canopy, further increasing the cost
For the metal film, within a certain thickness range, it is both transparent and conductive, and its resistivity is lower than that of the ITO film. However, when the film thickness increases, its transmittance decreases significantly. It is difficult for a single metal film to meet high transmittance at the same time. , low resistance requirements
In the above patents, the multi-layer structure is adopted, the thickness is relatively thick, and the process is complicated

Method used

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  • A kind of high-performance transparent conductive film and its preparation method and application
  • A kind of high-performance transparent conductive film and its preparation method and application
  • A kind of high-performance transparent conductive film and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0031] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0032] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 1500, and a high-performance transparent conductive film is obtained.

Embodiment 2

[0034] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0035] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0036] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 2250, and a high-performance transparent conductive film is obtained.

Embodiment 3

[0038] (1) Clean the substrate: Arrange the 1cm*1cm non-alkali glass substrate on the film rack, put it into a large beaker, and ultrasonically clean it with deionized water and isopropanol for 15 minutes respectively.

[0039] (2) Substrate drying: put the cleaned glass substrate into an oven, and dry it at 75-85°C.

[0040] (3) Deposit GZO conductive thin film using pulsed laser deposition system at room temperature, the material is GZO (2wt%Ga2O3, 98wt%ZnO) target, set the distance from the target to the substrate as 7.5cm, pulse energy 450mJ, frequency 5Hz, oxygen content 0Pa , the number of deposition pulses is 3000, and a high-performance transparent conductive film is obtained.

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Abstract

In the field of conductive film materials of the present invention, a high-performance transparent conductive film and its preparation method and application are disclosed. The preparation method is as follows: after the transparent substrate is cleaned and dried, the GZO conductive film is deposited by pulse laser at room temperature to obtain a high-performance transparent conductive film. The invention adopts GZO as the conductive thin film material, which is environmentally friendly; and adopts a single-layer GZO thin film, which has a simple process; and is prepared by pulse laser deposition without annealing treatment, effectively reducing the cost. The obtained GZO conductive film has the advantages of high transmittance, low roughness, and low resistance, and can be used for shielding electromagnetic devices and equipment, such as canopies of fighter jets and portholes of naval vessels.

Description

technical field [0001] The invention relates to the field of conductive thin film materials, and specifically relates to a high-performance transparent conductive thin film and its preparation method and application. Background technique [0002] Many electromagnetic devices and equipment, especially military electromagnetic devices and equipment, can emit or reflect electromagnetic signals, and their anti-interference and shielding capabilities have become very important indicators. For example, fighter jets, also known as fighter jets, are used to eliminate enemy aircraft and other aircraft Aviation type air strike weapons of military aircraft. Since the inside of the cockpit of a fighter jet is a cavity structure, each component is a large source of reflection. After the external electromagnetic wave is injected into the cockpit, it is easy to reflect multiple times and then exit the cockpit multiple times, forming a cavity reflection effect (similar to a corner reflecto...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01B13/00H01B5/14C23C14/28C23C14/08
CPCC23C14/086C23C14/28H01B5/14H01B13/0026
Inventor 姚日晖李晓庆宁洪龙符晓陈俊龙张旭梁宏富梁志豪卢宽宽彭俊彪
Owner SOUTH CHINA UNIV OF TECH
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