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Bloch surface wave one-way coupling chip based on asymmetric double-slit structure

A double-slit, asymmetric technology, applied in the field of micro-nano photonics, can solve the problems of low fault tolerance of surface micro-nano structures, difficult to achieve high unidirectional transmission ratio BSW, etc., and achieve simple structure, slit width and depth fault tolerance. High rate, simple requirements

Inactive Publication Date: 2020-07-28
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

For example, relying on circularly polarized light with a fixed incident angle to control the unidirectionality of BSW, using circularly polarized light and metasurface (metasurface) interface interaction to control, etc., the main problems are: (1) Fault tolerance for surface micro-nano structures Low sensitivity, requiring precision equipment to prepare surface micro-nano structures; (2) It can only be realized by intervening in the external space light field regulation; (3) It is difficult to achieve BSW with high unidirectional transmission ratio

Method used

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  • Bloch surface wave one-way coupling chip based on asymmetric double-slit structure
  • Bloch surface wave one-way coupling chip based on asymmetric double-slit structure
  • Bloch surface wave one-way coupling chip based on asymmetric double-slit structure

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Embodiment Construction

[0021] Below in conjunction with the drawings, preferred embodiments of the present invention are given and described in detail, so as to better understand the functions and features of the present invention.

[0022] The Bloch surface wave unidirectional coupling chip based on the asymmetric double slit structure of the present invention, such as figure 1 and figure 2 As shown, it includes a glass substrate 1 , a Bragg reflection unit 2 and an asymmetric double-slit structure 6 . Among them, the Bragg reflection unit 2 is arranged on the glass substrate 1, and the asymmetric double slit structure 6 is written on the top layer of the Bragg reflection unit 2 by means of focused ion beam etching, electron beam exposure or reactive ion etching (RIE). 5. The Bragg reflection unit 2 and the asymmetric double slit structure 6 work together to realize the one-way transmission of the Bloch surface wave.

[0023] The Bragg reflection unit 2 is composed of high-refractive-index mediu...

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Abstract

The invention relates to a Bloch surface wave one-way coupling chip based on an asymmetric double-slit structure. The chip comprises a glass substrate and a Bragg reflection unit arranged on the glasssubstrate, and the Bragg reflection unit is internally provided with an asymmetric double-slit structure. The chip is simple in structure, does not have strict requirements for the length of the slits and is high in error-tolerant rate of the width and depth of the slits, and the machining difficulty is reduced. Meanwhile, the requirement for incident light is simple, the BSW one-way transmissionfunction can be achieved only through polarized Gaussian light, and a complex column vector light field is not needed.

Description

technical field [0001] The invention relates to the field of micro-nano photonics, in particular to surface optics and the one-way control of its light field, in particular to a Bloch surface wave one-way coupling chip based on an asymmetric double-slit structure. Background technique [0002] Surface Plasmon Polaritons (SPPs) are a kind of localized electromagnetic waves that exist on the surface of structures. They have a good ability to restrain electromagnetic fields, and have sub-wavelength propagation, local field enhancement and high sensitivity to the surrounding environment. And other advantages, can break through the limitation of the diffraction limit of traditional photonic devices, has rich application prospects, and has been widely used in micro-nano photonic integration, super-resolution imaging and high-sensitivity sensing in recent years. However, since SPPs exist at the interface between the metal and the semi-infinite medium, the absorption loss and strong...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G02B6/122
CPCG02B6/122
Inventor 王茹雪武爱民
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI