Semiconductor device and manufacturing method thereof, integrated circuit and electronic equipment

Abstract

The invention discloses a semiconductor device and a manufacturing method thereof, an integrated circuit and electronic equipment, relates to the technical field of semiconductors, and aims to suppress a channel electric leakage phenomenon and improve the performance of the semiconductor device. The semiconductor device includes a substrate, a stacked structure, and a gate stack structure, whereinthe stacked structure is formed on the surface of the substrate; the stacked structure includes a first electrode layer, a channel layer, and a second electrode layer which are stacked on the substrate in a direction away from the substrate; the channel layer includes a channel supporting part and a channel material part; the channel material part is formed on the periphery of the channel supporting part; the bottom end of the channel supporting part is in contact with the top end of the first electrode layer; the top end of the channel supporting part is in contact with the second electrodelayer; the channel material part is in contact with the first electrode layer and the second electrode layer; the channel supporting part is a non-conductive part; and the gate stack structure surrounds the periphery of the channel material part. The manufacturing method of the semiconductor device is used for manufacturing the semiconductor device. The semiconductor device provided by the invention is applied to the electronic equipment.

Description

technical field [0001] The invention relates to the technical field of semiconductors, in particular to a semiconductor device, a manufacturing method thereof, an integrated circuit and electronic equipment. Background technique [0002] The vertical nanowire gate-around device is a new complementary metal oxide semiconductor transistor, which can increase the operating current and reduce the short channel effect. Therefore, the vertical nanowire gate-around device has good gate control ability and broad application prospects. [0003] However, the traditional vertical nanowire gate-all-around device makes it difficult to extract electrodes due to its own structural problems. Although some vertical nanowire gate-around devices with new structures can solve the problem of electrode lead-out difficulties, the channel layer on them is prone to leakage, which leads to the degradation of the working performance of the vertical nanowire gate-around devices. Contents of the inven...

AI Technical Summary

Problems solved by technology

[0003] However, the traditional vertical nanowire gate-all-around device makes it difficult to extract electrodes due to its own structural problems.

Although some vertical nanowire gate-around devices with new structures can solve the problem of electrode lead-out difficulties, the channel layer on them is prone to leakage, which leads to the degradation of the working performance of vertical nanowire gate-around devices.

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