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A kind of mems palladium alloy probe test method and its probe loading method

A test method, the technology of palladium alloy, applied in the direction of measuring device, testing material strength by applying stable bending force, testing material strength by applying stable tension/pressure, etc., can solve the problem of heat dissipation that is difficult to solve, and no palladium alloy probe has been found. Needle test equipment, technical difficulty and other issues

Active Publication Date: 2020-11-03
MAXONE SEMICON CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0010] However, no special testing equipment has been found for testing the properties of palladium alloy probes.
This situation is not only due to the new MEMS probe card technology and narrow field, it is difficult to have general-purpose equipment for direct application, but also it is difficult to manufacture special test equipment for testing the performance of palladium alloy probes. Due to the size of the MEMS probe card itself Tiny, the components are only millimeter level, so there are very strict requirements for the number of drive systems, if there are too many drive systems, not only cannot be arranged in a limited space, but also the problem of heat dissipation is difficult to solve

Method used

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  • A kind of mems palladium alloy probe test method and its probe loading method
  • A kind of mems palladium alloy probe test method and its probe loading method
  • A kind of mems palladium alloy probe test method and its probe loading method

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specific Embodiment approach 1

[0103] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0104] The MEMS palladium alloy probe testing device under the present embodiment, the structure schematic diagram is as follows figure 1 shown. The MEMS palladium alloy probe testing device comprises a barrel-shaped housing 1, a disturbance structure 2 arranged on the inner wall of the barrel-shaped housing 1, an electromagnetic pole 3 arranged on the outer wall of the barrel-shaped housing 1, and arranged horizontally in the barrel-shaped housing 1 Placed reference test platform 4, a symmetrical bending test structure 5 positioned above the reference test platform 4, a sealing cover 6 arranged above the barrel-shaped housing 1 and a sensor 7 installed on the sealing cover 6, a sprayer 8, a heater 9 and fan 10;

[0105] The disturbance structure 2 includes a disturbance body 2-1 with a circular cross section, a roller 2-2 and a tooth structure 2-3 dispo...

specific Embodiment approach 2

[0112] The following is a specific embodiment of the MEMS palladium alloy probe testing device of the present invention.

[0113] The MEMS palladium alloy probe test device under the present embodiment, on the basis of the specific embodiment one, further defines that the benchmark test platform includes a main board 4-1 and a plurality of sliders 4-2, and the main board 4-1 is provided with There are gaps from both sides to the center of symmetry, the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of vertical shafts are equally spaced on the slider 4-2 A circular through hole in a straight direction, the through hole can be equipped with a lifting structure 5-9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0114] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than ...

specific Embodiment approach 3

[0120] The following is a specific implementation of the benchmark test platform in the MEMS palladium alloy probe test device of the present invention.

[0121] The benchmark test platform under the present embodiment includes a main board 4-1 and a plurality of sliders 4-2, the main board 4-1 is provided with a gap from both sides to the symmetrical center direction, and the cross-sectional shape of the gap is "I" shape, a slider 4-2 is inserted in the gap, and a plurality of circular through holes in the vertical direction are equally spaced on the slider 4-2, and the through holes can be installed with a lifting structure 5- 9, such as image 3 Shown; The material of described main board 4-1 and slide block 4-2 is different, specifically as follows:

[0122] First, the speed at which the volume of the material of the main board 4-1 increases with the increase of temperature is lower than that of the material of the slider 4-2 with the increase of temperature. Before testi...

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Abstract

The invention discloses a MEMS palladium alloy probe testing method and a probe loading method thereof, which belong to the field of IC manufacturing industry, and specifically relate to a device, method and related key technology for performance testing of a palladium alloy probe in a MEMS probe card; The method first loads the probes to be tested: including the loading method of the probes to be tested when testing the tensile properties and the loading method of the probes to be tested when testing the bending properties; then setting the test temperature and humidity: monitoring by sensors, sprayers, heaters and The fan cooperates to realize the adjustment of temperature and humidity. During the adjustment process, the disturbance body rotates under the action of the electromagnetic pole to ensure that the temperature and humidity in the test environment are uniform; in the final test, only the symmetrical bending test structure is required to achieve multiple different parameters. Test the tensile performance and bending performance of the probe to be tested; the method can test the tensile performance and bending performance of the probe on the MEMS probe card.

Description

technical field [0001] The invention discloses a MEMS palladium alloy probe testing method and a probe loading method thereof, which belong to the field of IC manufacturing industry, and specifically relate to a device, method and related key technologies for performance testing of palladium alloy probes in MEMS probe cards. Background technique [0002] The probe card is a very important technology in the chip manufacturing process. Before the chip is packaged, the probes on the probe card directly contact the pads or bumps on the chip to lead out the chip signal, and then cooperate with peripheral testing instruments and Software control realizes automatic measurement, and then screens out defective products to ensure product yield. [0003] With the development of micro-electromechanical system (MEMS) technology, the size of the chip is getting smaller and smaller, reaching the order of millimeters, and the degree of integration inside the chip is getting higher and highe...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G01N3/02G01N3/08G01N3/20
CPCG01N3/02G01N3/08G01N3/20G01N2203/0017G01N2203/0023G01N2203/005
Inventor 于海超周明赵梁玉刘明星
Owner MAXONE SEMICON CO LTD
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