Transverse device for reducing influence of high-voltage interconnection and preparation method thereof

Abstract

The invention provides a transverse device for reducing the influence of high-voltage interconnection and a preparation method thereof. The device comprises a first-type doped impurity contact region,a second-type doped impurity contact region, a second-type doped impurity well region, a first-type doped impurity well region, a first-type doped impurity drift region, a first-type doped impurity epitaxial layer, an insulating buried layer, a second-type doped impurity substrate, a source electrode, a gate electrode, a drain electrode, a gate oxide layer and a silicon local oxidation isolationoxide layer. The first-type doped impurity drift region of the high-voltage interconnection region and the first-type doped impurity epitaxial layer of the non-high-voltage interconnection region arerespectively formed through different process steps, the doping concentration of the drift region of the high-voltage interconnection region is changed, the depletion capability of the drift region ofthe high-voltage interconnection region is enhanced, and the breakdown voltage of the device is improved.

Description

technical field [0001] The invention belongs to the field of semiconductor power devices, and in particular relates to a lateral device that reduces the influence of high-voltage interconnection. Background technique [0002] With the great development of power semiconductor devices in the fields of power equipment and control circuits, the demand for power semiconductor devices will increase in the future. The advantage of power integrated circuits is the monolithic integration of high and low voltage devices, but it also brings severe challenges to circuit design. [0003] At present, most of the design styles of devices are runway type, which are mainly divided into two parts: high-voltage interconnection area and non-high-voltage interconnection area. regional structure. When a high-voltage interconnect line crosses the drift region of a high-voltage device such as a lateral double-diffused metal-oxide-semiconductor field-effect transistor LDMOS (Lateral Double-Diffuse...

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Problems solved by technology

[0004] The invention aims at that in the high-voltage interconnection circuit, when the high-voltage interconnection line crosses the surface of the lateral device, the electric field lines are too concentrated in the local area of ​​the device, and induced charges are generated on the device surface, making it difficult to completely deplete the drift region, causing the device to occur in advance Breakdown issues, providing a lateral device that reduces the impact of high voltage interconnects

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