Broadband terahertz wave absorber based on three-dart-shaped graphene

A graphene and wave absorber technology, applied in the field of terahertz metamaterial wave absorption, can solve problems such as low absorption efficiency, limited application, and narrow bandwidth

Active Publication Date: 2020-08-11
GUILIN UNIV OF ELECTRONIC TECH
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Problems solved by technology

However, the narrow bandwidth, low absorption efficiency and untunable absorption performance of the absorbers greatly limit their application in practice

Method used

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  • Broadband terahertz wave absorber based on three-dart-shaped graphene
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  • Broadband terahertz wave absorber based on three-dart-shaped graphene

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Embodiment Construction

[0023] The present invention will be further described below in conjunction with specific examples.

[0024] Such as figure 1 , 2 As shown, the present invention proposes a broadband terahertz absorber based on three "dart" shaped graphene. The device is composed of multiple absorbing units, and its main structure includes a bottom metal plate (1), a silicon dioxide dielectric layer (2), and three "dart"-shaped graphene layers (3), which are attached to each other. combine. The underlying metal film (1) is a gold film, and the three "dart"-shaped graphenes (3) are formed by adding dielectric silicon between each layer of "dart"-shaped graphene. The geometric centers of the absorbing units are on a straight line.

[0025] As an example, the structural dimensions of each absorbing unit are as follows: the lattice period is P=20000nm, the gold film thickness is h1=600nm, and the silicon dioxide thickness is h2=3000nm. , the three "dart" shaped graphenes are counted from bott...

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Abstract

The invention provides a broadband terahertz wave absorber of three dart-shaped graphene. The wave absorber is composed of a plurality of wave absorbing units, and the main structure of the wave absorber comprises a bottom metal plate (1), a silicon dioxide dielectric layer (2) and a three-dart-shaped graphene layer (3). The broadband wave absorber with good absorption performance on terahertz waves is formed through interaction between the multiple layers of graphene and the dielectric layer, voltage can be applied to the wave absorber to change Fermi level of the graphene layer, and absorption frequency adjustability is realized. The broadband terahertz wave absorber has the advantages of insensitive polarization, good absorption effect and the like, the bandwidth with the absorption efficiency of more than 90% reaches about 2.2 THz, and the application prospect is very wide.

Description

[0001] (1) Technical field [0002] The invention relates to a broadband terahertz wave absorber based on triple "dart" shaped graphene, belonging to the field of terahertz metamaterial wave absorption. [0003] (2) Background technology [0004] In recent years, the terahertz frequency band has emerged as one of the most interesting platforms due to its broad applications in spectroscopy, medical imaging, modulators, security and communications. Terahertz absorbers are an important branch that can find practical applications in the aforementioned fields. However, the narrow bandwidth, low absorption efficiency, and untunable absorption performance of absorbers greatly limit their practical application. In order to better expand the applications of terahertz absorbers, more new devices and materials are urgently needed. Graphene, as a two-dimensional material with a honeycomb lattice structure, has become one of the most promising materials due to the tunability of its electr...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01Q15/00H01Q17/00G02B5/00
CPCG02B5/003H01Q15/0086H01Q17/008
Inventor 陈明王帅钊张文波张佑丹陈汉苑立波
Owner GUILIN UNIV OF ELECTRONIC TECH
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