A kind of m12 large size silicon wafer cutting process

A silicon wafer cutting and large-size technology, which is applied in the field of M12 large-size silicon wafer cutting technology, can solve the problems of decreased production efficiency, increased difficulty of silicon wafer cutting end, and increased cost, so as to reduce the cost of slicing and reduce the abnormality of chipping Bad, reduce the effect of changing the number of times

Active Publication Date: 2022-07-26
乐山高测新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

With the continuous development and changes of the photovoltaic market and the intensification of market competition, it is hoped that the power of modules can be increased by expanding the size of silicon wafers to obtain product competitiveness; however, the difficulty of producing larger-sized silicon wafers will increase significantly for the cutting end of silicon wafers , the production efficiency will also decrease and the cost will increase; therefore, reducing costs and increasing efficiency, improving the quality of silicon wafers, and the process is an important key factor in cutting applications. It is important to invent a cutting process suitable for M12 large-size silicon wafers significance

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0030] An M12 large-size silicon wafer cutting process, comprising the following steps:

[0031] S1: sticking rod: select the qualified silicon rod size 210*210mm, use the curing agent to bond the silicon rod to the workpiece board for curing, the curing time is 3h, and the room temperature is 23-28℃;

[0032] S2: Loading the rod: Use the feeding car to load the silicon rod onto the worktable clamping guide rail of the cutting machine to ensure that the silicon rod is properly clamped in the worktable clamping guide rail;

[0033] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply cylinder of the multi-wire cutting machine for use. The volume ratio of coolant to pure water is 1.5L: 250L;

[0034] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 165L / min, set the diamond wire running speed to 1800m / min, perform a reciprocating high-speed wire cutting he...

Embodiment 2

[0042] An M12 large-size silicon wafer cutting process, comprising the following steps:

[0043] S1: sticking rod: select qualified silicon rod size 210*210mm, silicon rod length 650mm, use curing agent to bond the silicon rod to the workpiece board for curing, curing time is 3h, room temperature is 23 ~ 28 ℃;

[0044] S2: Loading the rod: Use the feeding car to load the silicon rod onto the worktable clamping guide rail of the cutting machine to ensure that the silicon rod is properly clamped in the worktable clamping guide rail;

[0045] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply cylinder of the multi-wire cutting machine for use. The volume ratio of coolant to pure water is 2.0L: 300L;

[0046] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 180L / min, set the diamond wire running speed to 2100m / min, perform a reciprocating high-speed wire c...

Embodiment 3

[0055] An M12 large-size silicon wafer cutting process, comprising the following steps:

[0056] S1: sticking rod: select qualified silicon rod size 210*210mm, silicon rod length 650mm, use curing agent to bond the silicon rod to the workpiece board for curing, curing time is 3h, room temperature is 23 ~ 28 ℃;

[0057] S2: Loading the rod: Use the feeding car to load the silicon rod onto the worktable clamping guide rail of the cutting machine to ensure that the silicon rod is properly clamped in the worktable clamping guide rail;

[0058] S3: Add cutting fluid: The cutting fluid is a mixture of coolant and pure water. Take the cutting fluid and stir it evenly, and add it to the liquid supply cylinder of the multi-wire cutting machine for use. The volume ratio of coolant to pure water is 2.0L: 350L;

[0059] S4: Preheating before cutting: Turn on the cutting fluid flow rate of 170L / min, set the diamond wire running speed to 2000m / min, perform a reciprocating high-speed wire c...

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PUM

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Abstract

The invention relates to an M12 large-size silicon wafer cutting process, which belongs to the technical field of crystalline silicon processing. Cutting; adding cutting fluid: adding cutting fluid to the cutting machine; preheating before cutting: turning on cutting fluid and wire mesh, reciprocating wire; cutting: setting cutting parameters to cut silicon rods; blanking: setting retracting parameters , the silicon rod is gradually separated from the wire mesh, which can reduce the wear and tear of the diamond wire, effectively reduce the abnormal and bad edge collapse of the adhesive surface of the silicon wafer, thereby reducing the wire consumption of the diamond wire, which has the characteristics of significantly reducing the edge collapse phenomenon of the silicon wafer and reducing the cost of slicing.

Description

technical field [0001] The invention belongs to the technical field of crystalline silicon processing, and in particular relates to an M12 large-size silicon wafer cutting process. Background technique [0002] At present, the photovoltaic market is on the silicon wafer side, and M12 (210mm) large-sized silicon wafers are becoming the development trend of the industry. The increase in the size of silicon wafers can increase the output of cell and module production lines, reduce the production cost per watt, and directly increase the component power. At present, the size of M2 silicon wafer (margin 156.75mm) is the mainstream in the industry; in order to improve the power of components and reduce production costs and other factors, the size of silicon wafers has changed to M4 (158.75) and M6 (166mm). With the continuous development and changes of the photovoltaic market and the intensification of market competition, it is hoped to increase the power of modules by expanding t...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B28D5/04B28D7/04B28D7/02B28D7/00
CPCB28D5/042B28D5/0064B28D5/0058B28D5/0082B28D5/0076
Inventor 邢旭刘云强李璐
Owner 乐山高测新能源科技有限公司
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