Device for nondestructively detecting resistivity of silicon wafer by terahertz and application method of device

A non-destructive testing and terahertz detector technology, applied in the terahertz field, can solve problems such as many equipment links, unsuitable silicon wafer sample census, complex circuit design, etc., and achieve the effect of improving yield and quality

Pending Publication Date: 2018-06-29
BEIJING UNIV OF TECH +1
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Problems solved by technology

However, this method has the disadvantages of many equipment links, complex coordination control, and complica

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  • Device for nondestructively detecting resistivity of silicon wafer by terahertz and application method of device

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[0023] Example 1

[0024] Such as figure 1 As shown, a device for terahertz nondestructive testing of silicon chip resistivity includes a terahertz radiation source 1, a collimated beam expanding system 2, at least one sample stage 3 that can move in parallel, a terahertz detector 4, a computer 5, and a A mechanical sucker 6 for grabbing silicon wafers, and a rework wafer collection box 7. The terahertz radiation source 1 is preferably a terahertz quantum cascade laser with a frequency of 4.3 THz, which is arranged at the bottom of the device and radiates terahertz waves vertically upward. The collimated beam expanding system 2 is preferably a Galileo type collimated beam expanding system, which is arranged above the terahertz radiation source 1. The sample stage 3 is preferably a sample stage with an aperture of 3 cm that can move horizontally in one direction, and the number is multiple, which is arranged above the collimating beam expanding system 2. The terahertz detector ...

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Abstract

The invention provides a device for nondestructively detecting the resistivity of a silicon wafer by terahertz and an application method of the device and relates to the technical field of terahertz.The device comprises a terahertz radiation source, a collimation and beam expanding system, a sample platform, a terahertz detector, a computer, a mechanical suction disc and a reworking sheet collection box, wherein the terahertz radiation source is arranged at the lowest side; the terahertz radiation source is used for vertically and upward radiating terahertz waves; the collimation and beam expanding system is arranged just above the terahertz radiation source; the terahertz detector is arranged just above the collimation and beam expanding system; a certain distance is formed between the terahertz detector and the collimation and beam expanding system; a probe of the terahertz detector is arranged downward and is used for receiving terahertz radiation; the sample platform is arranged between the terahertz detector and the collimation and beam expanding system and can move along the horizontal plane; the computer is connected with the terahertz detector through a data line; the mechanical suction disc is connected with the computer through the data line; the reworking sheet collection box is independent. According to the device provided by the invention, the resistivity of the silicon wafer can be nondestructively measured under the condition that the silicon wafer is not touched, and the silicon wafer is not damaged.

Description

technical field [0001] The invention relates to the field of terahertz technology, in particular to a terahertz non-destructive testing device for resistivity of silicon wafers and a method for using the same. Background technique [0002] Terahertz (Terahertz, referred to as THz, 1THz = 10 12 Hz) wave, usually defined as an electromagnetic wave with a frequency in the range of 0.1-10THz (wavelength 30-3000μm), its wave band is between microwave and infrared, and it is in the cross field of electronics and photonics research. Compared with other electromagnetic waves, terahertz waves have many unique properties, such as security, high penetration, fingerprint spectrum and bandwidth, and can be widely used in biomedicine, nondestructive testing, radar, communications, military, national defense , aviation and other fields. [0003] In the semiconductor industry and the photovoltaic industry, the resistivity of silicon wafers is one of the important indicators for judging th...

Claims

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Application Information

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IPC IPC(8): G01N21/59G01R27/02
CPCG01N21/59G01R27/02
Inventor 严辉史珂吴卫东王雪敏张永哲仝文浩邹蕊矫黎维华宋雪梅
Owner BEIJING UNIV OF TECH
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