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Growth method of GaN thick film

A growth method and thick film technology, applied in the direction of single crystal growth, crystal growth, single crystal growth, etc., can solve the problem of inability to grow thick films, and achieve the effect of good thermal stress release.

Inactive Publication Date: 2020-08-18
SHANDONG INSPUR HUAGUANG OPTOELECTRONICS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] Aiming at the deficiencies of the prior art, the present invention proposes a GaN thick film growth method. GaN seed crystals are grown on sapphire, and then GaN independent modules are etched to form an array pattern on the GaN seed crystals. By adjusting the etching, the sapphire The depth and width of GaN control the stress of GaN thick film, and use organic chemical vapor deposition or hydride vapor phase epitaxy for lateral epitaxial growth to realize the lateral connection of independent parts of GaN and obtain a flat GaN thick film, which solves the problem that heterogeneous epitaxy cannot grow due to high stress Thick film problem, providing thick film for the preparation of GaN self-supporting substrates, used in homoepitaxial power devices, blue lasers, etc., to meet the application requirements of high-efficiency new high-power power electronics, optoelectronics and other fields

Method used

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  • Growth method of GaN thick film
  • Growth method of GaN thick film
  • Growth method of GaN thick film

Examples

Experimental program
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Embodiment 1

[0028] A kind of growth method of GaN thick film, such as image 3 shown, including the following steps:

[0029] (1) Evaporation of SiO on a sapphire substrate with GaN seeds 2 mask;

[0030] (2) Through the existing photolithographic ICP etching technology, the GaN seed crystal is etched to form an arrayed GaN independent module with an array pattern, which is always etched into the sapphire substrate, such as figure 1 , 2 As shown, the array pattern is a square;

[0031] (3) The etching channel is etched from the surface of the GaN seed crystal into the sapphire substrate, the width of the etching channel etched into the sapphire substrate is 1-50 μm, and the etching depth is 1-50 μm;

[0032] The width and depth of the etching channel can not only realize the lateral connection of GaN independent modules, obtain a flat GaN thick film, but also release the force of the heterojunction to the maximum extent. The depth is too shallow or the width is too narrow to achieve t...

Embodiment 2

[0035] A GaN thick film growth method, as described in Example 1, the difference is that in step (1), the GaN seed crystal growth thickness is 3 μm, SiO 2 The mask thickness is 1000nm;

[0036] In step (3), the width of the etching channel etched into the sapphire substrate is 20 μm, and the etching depth is 25 μm;

[0037] In step (4), the method of organic chemical vapor deposition is adopted, the growth pressure is controlled between 20-50mbar, the V / III ratio is controlled between 300-2000, and the growth temperature is controlled between 1050-1150°C. Under these conditions GaN growth has the highest lateral epitaxy rate, which can realize fast lateral connection of independent parts of GaN.

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Abstract

The invention relates to a growth method of a GaN thick film. The invention belongs to the technical field of optoelectronic power devices. According to the invention, the method comprises the steps:growing GaN seed crystals on a sapphire substrate; etching the GaN seed crystals to form a GaN independent module with an array pattern; controlling the stress of the GaN thick film by adjusting the depth and the width of the GaN thick film entering the sapphire through etching; and carrying out lateral epitaxial growth by using organic chemical vapor deposition or hydride vapor phase epitaxy. According to the GaN self-supporting substrate, GaN independent part transverse connection is achieved, a flat GaN thick film is obtained, the problem that the thick film cannot be grown due to large stress of heteroepitaxy is solved, the thick film is provided for preparation of the GaN self-supporting substrate, the GaN self-supporting substrate is applied to homoepitaxy power devices, blue lasersand the like, and the application requirements of the fields of efficient novel high-power power power electronics, photoelectricity and the like are met.

Description

technical field [0001] The invention relates to a technology for preparing high-efficiency and high-power gallium nitride devices and blue lasers and other optoelectronic power devices from homoepitaxial materials, and specifically provides a GaN thick film growth method, which belongs to the technical field of optoelectronic power devices. Background technique [0002] GaN materials are ideal materials for making optoelectronic devices, especially blue-green LEDs and LDs. This type of light source is used in high-density optical information storage, high-speed laser printing, full-color dynamic high-brightness display, solid-state lighting source, high-brightness signal detection, Communication and other aspects have broad application prospects and huge market potential. In addition, GaN semiconductor materials are also ideal materials for making high-temperature, high-frequency, and high-power devices. GaN is a representative of nitride materials, one of the III-V compoun...

Claims

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Application Information

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IPC IPC(8): H01L21/02C30B25/04C30B25/18C30B29/40
CPCC30B25/04C30B25/186C30B29/406H01L21/0242H01L21/0243H01L21/0254H01L21/0262
Inventor 张义王成新徐勤武王建立李毓锋
Owner SHANDONG INSPUR HUAGUANG OPTOELECTRONICS