A kind of semiconductor laser and its manufacturing method

Abstract

The invention discloses a semiconductor laser and a manufacturing method thereof. The method comprises: forming an epitaxial layer on the first surface of a substrate to obtain an epitaxial wafer; forming a ridge pattern mask layer on the epitaxial wafer; forming a ridge pattern The epitaxial wafer of the mask layer is etched in a reaction chamber with a protective gas; the second gas is introduced to grow an anti-oxidation layer on the etched surface and the etched wall of the epitaxial wafer; the ridge pattern mask on the epitaxial wafer is removed. film layer; wherein, the protective gas and the second gas are non-oxygen-containing gases. By placing the epitaxial wafer forming the ridge pattern mask layer in a reaction chamber with a protective gas for etching, the etching surface and the etching wall will not be oxidized when the epitaxial layer is etched; After the etching is completed, an anti-oxidation layer is grown on the etching surface and the etching wall of the epitaxial wafer, and the etching surface and the etching wall can be further covered by the anti-oxidation layer to prevent the etching surface of the epitaxial wafer after it is taken out of the reaction chamber. And the etched wall is oxidized by air.

Description

technical field [0001] The invention relates to the technical field of lasers, in particular to a semiconductor laser and a manufacturing method thereof. Background technique [0002] Semiconductor laser is an important optoelectronic device, which has a wide range of applications in industry, national defense and other fields. The lateral waveguide structures of semiconductor lasers include gain waveguide structures, ridge waveguide structures, buried waveguide structures, etc., among which the ridge waveguide structure is the most common. The traditional manufacturing method of the ridge waveguide structure is as follows: after the semiconductor laser wafer is grown, photolithography is performed to obtain a photoresist mask, and then the epitaxial layer is wet etched to form a ridge structure, and finally the photoresist is removed. [0003] The traditional manufacturing method of the ridge waveguide structure has the following problems: the waveguide layer and the confi...

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Problems solved by technology

[0004] In view of this, the embodiment of the present invention provides a semiconductor laser and its manufacturing method to solve the problem that the traditional ridge waveguide structure manufacturing method will cause the easy-to-oxidize material to be easily oxidized during the manufacturing process

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