Preparation method of high-purity silicon carbide powder for silicon carbide single crystal growth
A high-purity silicon carbide and silicon carbide single crystal technology, applied in the direction of single crystal growth, single crystal growth, silicon carbide, etc., can solve the problems of low purity, high cost, and inappropriate batch synthesis of silicon carbide powder, etc., to achieve The effect of low preparation cost, improved purity and low cost
Pending Publication Date: 2020-08-28
璨隆科技发展有限公司 +2
View PDF10 Cites 0 Cited by
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
However, these methods are either costly and unsuitable for batch synthesis of SiC powders; or the purity is not high and are not suitable for SiC single crystal growth
Method used
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View moreImage
Smart Image Click on the blue labels to locate them in the text.
Smart ImageViewing Examples
Examples
Experimental program
Comparison scheme
Effect test
Embodiment Construction
[0026] Such as figure 1 and figure 2 As shown, the present invention discloses a method for preparing a high-purity silicon carbide powder for silicon carbide single crystal growth, which includes the following steps:
[0027] Step 1, put high-purity SiO 2 (purity>99.999%) powder is put into graphite crucible 30, then puts crucible in vacuum heating furnace 10, as figure 1 Show. SiO 2 The size of the powder depends on the required product specifications, and the general particle size is 50~200μm.
[0028] Step 2, vacuumize the vacuum heating furnace 10 to 10 -4 Below Pa; then start to pour CH into the vacuum heating furnace 10 4 / N 2 Mixed gas to 70~90kPa. N 2 As protective and transport gas and catalytic gas, CH 4 as a gas-phase carbon source.
[0029] Step 3, use heater 20 to SiO 2 The powder is heated to 1800 oC ~2000 o C, let it stand for more than 3 hours. The final product is silicon carbide powder (SiC+C) with residual carbon, and the by-product is mixe...
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More PUM
| Property | Measurement | Unit |
|---|---|---|
| particle diameter | aaaaa | aaaaa |
Login to View More
Abstract
The invention relates to a preparation method of high-purity silicon carbide powder for silicon carbide single crystal growth. CH4 is used as a gas-phase carbon source, and high-purity SiO2 powder isused as a solid-phase silicon source. Under vacuum, the gas-phase carbon source is injected again, and the carbon source is uniformly distributed in the solid-phase silicon source; unnecessary pollution is avoided, and the purity of silicon carbide is improved. Moreover, the SiC powder is synthesized by utilizing a gas phase / solid phase, so that impurities of a gas phase raw material are not leftin a SiC finished product material. The excessive C source is used for synthesis, so that conversion of all Si sources can be ensured, the excessive C is from CH4 and does not contain impurities, andmeanwhile, O2 gas is introduced to oxidize the residual C into CO2 gas under dry, static and high-temperature conditions, so that the C can be easily separated from the powder. The raw materials are easy to obtain and the cost is relatively low. Therefore, the preparation cost is low, and the prepared silicon carbide powder is high in purity.
Description
technical field [0001] The invention relates to the field of silicon carbide single crystal growth materials, in particular to a method for preparing high-purity silicon carbide powder for silicon carbide single crystal growth. Background technique [0002] In recent years, high-resistivity, high-purity semi-insulating silicon carbide single crystal substrates have been used more and more in high-frequency and high-power SiC and GaN-based electronic devices. At present, PVT (Physical Vapor Transport) method is widely used to grow high-purity semi-insulating silicon carbide single crystal. In PVT method, SiC powder is used as the raw material for growing single crystal, so the parameters of SiC powder directly affect the high-purity The growth quality and electrical performance of semi-insulating single products. [0003] Commercial SiC powder is generally prepared by the Acheson method, that is, the carbothermal reduction method. However, the SiC powder prepared by this me...
Claims
the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More Application Information
Patent Timeline
Login to View More Patent Type & Authority Applications(China)
IPC IPC(8): C01B32/97C30B29/36C30B35/00
CPCC01B32/97C30B35/007C30B29/36C01P2006/40C01P2004/61
Inventor 叶宏伦钟健钟其龙刘崇志张本义
Owner 璨隆科技发展有限公司