Silicon dioxide-diamond composite material and preparation method thereof
A composite material and silicon dioxide technology, applied in metal material coating process, gaseous chemical plating, coating, etc., can solve the problems of insufficient bonding force of film-forming base, inability to fully utilize diamond and excellent performance, etc., to avoid Insufficient bonding between layers, continuous adjustment of oxidation resistance, and cost-saving effects
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Embodiment 1
[0035] A silicon dioxide-diamond composite material, the composite material is a bulk material formed by a multilayer film, and each layer of film is made of SiO 2 The mixed phase structure composed of diamond and diamond, the thickness of each film is 20μm, SiO 2 And the grain size of diamond is 13 μm.
[0036] The preparation method of above-mentioned silicon dioxide-diamond composite material, comprises the steps:
[0037] 1) Using the microwave plasma chemical vapor deposition method, introducing silicon-carbon-containing gas as the precursor and hydrogen as the reaction gas, co-depositing diamond 2-1 and SiC 2-2 on the surface of the substrate 1 to prepare a SiC-diamond hybrid Phase film 2, such as figure 1 As shown, the SiC-diamond mixed phase film 2 includes a mixed phase of diamond 2-1 and SiC 2-2; the specific preparation method of the SiC-diamond mixed phase film 2 is: use graphite as the substrate 1, and use the substrate 1 Deionized water and absolute ethanol we...
Embodiment 2
[0041] A silicon dioxide-diamond composite material, the composite material is a bulk material formed by a multilayer film, and each layer of film is made of SiO 2 The mixed phase structure composed of diamond and diamond, the thickness of each film is 10μm, SiO 2 And the diamond grain size is 5 μm.
[0042] The preparation method of above-mentioned silicon dioxide-diamond composite material, comprises the steps:
[0043] 1) Using the microwave plasma chemical vapor deposition method, introducing silicon-containing gas and carbon-containing gas as the precursor, hydrogen as the reaction gas, and co-depositing diamond 2-1 and SiC 2-2 on the surface of the substrate 1 to prepare SiC - Diamond mixed phase film 2, such as figure 1 As shown, the SiC-diamond mixed phase film 2 includes a mixed phase of diamond 2-1 and SiC 2-2; the specific preparation method of the SiC-diamond mixed phase film 2 is: use single crystal silicon as the substrate 1, and the substrate 1 Ultrasonic cle...
Embodiment 3
[0047] A silicon dioxide-diamond composite material, the composite material is a bulk material formed by a multilayer film, and each layer of film is made of SiO 2 The mixed phase structure composed of diamond and diamond, the thickness of each film is 1μm, SiO 2 And the grain size of diamond is 0.1 μm.
[0048] The preparation method of above-mentioned silicon dioxide-diamond composite material, comprises the steps:
[0049] 1) Using the microwave plasma chemical vapor deposition method, introducing silicon-carbon-containing gas as the precursor and hydrogen as the reaction gas, co-depositing diamond 2-1 and SiC 2-2 on the surface of the substrate 1 to prepare a SiC-diamond hybrid Phase film 2, such as figure 1 As shown, the SiC-diamond mixed phase film 2 includes a mixed phase of diamond 2-1 and SiC 2-2; the specific preparation method of the SiC-diamond mixed phase film 2 is: use single crystal silicon as the substrate 1, and the substrate 1 Ultrasonic cleaning was perfo...
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Abstract
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