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GAAS-based optoelectronic device and preparation method thereof

A technology of optoelectronic devices and arrays, applied in the direction of electrical components, semiconductor devices, circuits, etc., can solve the problems of reduced device yield and damaged devices, and achieve the effects of increasing yield, improving performance, and improving reflection

Active Publication Date: 2022-07-15
INST OF PHYSICS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] When the wet etching method is used to etch the gap for device separation, it is difficult to avoid the epitaxial layer on the substrate being etched completely and penetrating, which will damage the device during the later process steps, resulting in a decrease in the yield of the device

Method used

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  • GAAS-based optoelectronic device and preparation method thereof
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  • GAAS-based optoelectronic device and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] Step 1: Provide a GaAs-based optoelectronic device epitaxial wafer.

[0089] figure 1 It is a schematic cross-sectional view of the GaAs-based optoelectronic device epitaxial wafer provided in step 1 of the first embodiment of the present invention. like figure 1 As shown, the epitaxial wafer includes, from bottom to top, an N-type GaAs substrate 111, an N-type GaAs buffer layer 112, an InGaP substrate corrosion barrier layer 13, a highly doped P-type GaAs back electrode ohmic contact layer 14, and InGaP inter-channel etching Barrier layer 15 , GaAs active layer 16 , N-type GaAs top electrode ohmic contact layer 17 . Among them, the GaAs active layer 16 is used to realize the material of photoelectric mutual conversion.

[0090] Step 2: Prepare multiple sets of grating photoresist patterns on the surface of the N-type GaAs top electrode ohmic contact layer 17 .

[0091] figure 2 is the top view of the GaAs-based optoelectronic device structure array obtained in st...

Embodiment 2

[0109] It is basically the same as Example 1, with the following differences:

[0110] In step 1, a GaAs-based optoelectronic device epitaxial wafer is provided.

[0111] Figure 9 It is a schematic cross-sectional view of the GaAs-based optoelectronic device epitaxial wafer provided in step 1 of the second embodiment of the present invention. like Figure 9 As shown, the epitaxial wafer includes, from bottom to top, an N-type GaAs substrate 211, an N-type GaAs buffer layer 212, an InGaP substrate corrosion barrier layer 23, a highly doped P-type GaAs back electrode ohmic contact layer 24, and InGaP inter-channel etching Barrier layer 25 , P-type AlGaAs back field layer 256 , GaAs active layer 26 , InGaP window layer 267 , N-type GaAs top electrode ohmic contact layer 27 .

[0112] Other steps are the same as those in Embodiment 1, and are not repeated here.

[0113] Figure 10 is a schematic cross-sectional view of the GaAs-based optoelectronic device according to the se...

Embodiment 3

[0117] It is basically the same as Example 1, with the following differences:

[0118] In step 1, a GaAs-based optoelectronic device epitaxial wafer is provided.

[0119] Figure 11 It is a schematic cross-sectional view of the GaAs-based optoelectronic device epitaxial wafer provided in step 1 of the third embodiment of the present invention. like Figure 11 As shown, the epitaxial wafer includes from bottom to top: N-type GaAs substrate 311, N-type GaAs buffer layer 312, InGaP substrate corrosion barrier layer 33, highly doped P-type GaAs back electrode ohmic contact layer 34, InGaP inter-channel corrosion Barrier layer 35 , P-type AlGaAs back field layer 356 , GaAs active layer 36 , InGaP window layer 367 , N-type GaAs top electrode ohmic contact layer 37 .

[0120] After step 1, it includes the following steps: preparing a photoresist pattern on the surface of the N-type GaAs top electrode ohmic contact layer 37, and forming a patterned structure on the surface of the N...

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Abstract

The invention provides a preparation method of a GaAs-based optoelectronic device and a GaAs-based optoelectronic device array. The GaAs-based optoelectronic device includes, from bottom to top, a metal substrate assembly; a back electrode layer; a back electrode ohmic contact layer; an inter-channel corrosion barrier layer; GaAs Active layer; top electrode ohmic contact layer; top electrode layer. The preparation method includes the steps of: 1), providing a GaAs-based optoelectronic device epitaxial wafer, which includes a substrate, a substrate corrosion barrier layer, a back electrode ohmic contact layer, an intermediate channel corrosion barrier layer, a GaAs active layer, and a top electrode ohmic contact layer; 2), prepare the top electrode layer on the top electrode ohmic contact layer; 3), form the inter-channel trench; 4), adhere the transition substrate on the top electrode layer; 5), remove the substrate and the substrate corrosion barrier layer 6), prepare a back electrode layer on the back electrode ohmic contact layer; 7), prepare a metal substrate assembly on the back electrode layer; 8), remove the transition substrate. The GaAs-based optoelectronic device has good heat dissipation capability, and the preparation method improves the yield.

Description

technical field [0001] The invention relates to optoelectronic devices, in particular to a preparation method of a GaAs-based optoelectronic device and an array thereof. Background technique [0002] Optoelectronic devices have two different structures, planar and vertical. The planar structure means that the top electrode and the back electrode of the photoelectric device are located on the same side of the photoelectric conversion layer, but the two electrodes located on the same side reduce the window area of ​​the incident light or outgoing light of the photoelectric device, thereby reducing its photoelectric conversion. performance. The vertical structure means that the two electrodes of the photoelectric device are located on opposite sides of the photoelectric conversion layer, and the influence on the window area thereof is small. In addition, the current direction in the photoelectric device with the vertical structure is perpendicular to the photoelectric convers...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0392H01L31/0232H01L31/024H01L31/18
CPCH01L31/0392H01L31/03926H01L31/02327H01L31/024H01L31/1892H01L31/1844Y02P70/50
Inventor 陈弘霍雯雪贾海强杜春花江洋王文新
Owner INST OF PHYSICS - CHINESE ACAD OF SCI