Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Resonance device and resonance device manufacturing method

A technology of a resonant device and a manufacturing method, which is applied in the directions of manufacturing tools, microstructure devices, and manufacturing microstructure devices, etc., can solve the problems of dislocation of eutectic composition, reduction of vacuum degree, inability to heat treatment, etc.

Active Publication Date: 2020-09-04
MURATA MFG CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006]However, if heat treatment for degassing is performed at a high temperature in the joint using eutectic bonding, thermal diffusion is likely to occur at the joint, In the case of eutectic bonding, it will cause dislocation of eutectic composition, failure of eutectic reaction, etc.
Therefore, heat treatment for degassing cannot be performed at a high temperature, and there is a concern that the degree of vacuum in the vibration space of the resonator may decrease due to exhaust.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Resonance device and resonance device manufacturing method
  • Resonance device and resonance device manufacturing method
  • Resonance device and resonance device manufacturing method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0021] Embodiments of the present invention will be described below. In the following description of the drawings, the same or similar structural elements are denoted by the same or similar reference numerals. The drawings are illustrative, and the dimensions and shapes of each part are schematic, and should not be interpreted as limiting the technical scope of the present invention to this embodiment.

[0022]

[0023] First, refer to figure 1 and figure 2 , the schematic configuration of the resonator device 1 according to one embodiment of the present invention will be described. figure 1 It is a perspective view schematically showing the appearance of the resonator device 1 according to one embodiment of the present invention. in addition, figure 2 It is an exploded perspective view schematically showing the structure of the resonator device 1 according to one embodiment of the present invention.

[0024] The resonator device 1 includes a lower cover 20 , a resona...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
depthaaaaaaaaaa
Login to View More

Abstract

Provided are: a resonance device wherein the vibration space of a resonator can be maintained in a high vacuum state; and a resonance device manufacturing method. A resonance device 1 is provided with: a MEMS substrate 50 that includes a resonator; an upper cover 30; and a bonding section 60 that bonds the MEMS substrate 50 and the upper cover 30 to each other such that the vibration space of theresonator 10 is sealed. The bonding section includes: a eutectic layer 65, which is continuously provided from the MEMS substrate 50 side toward the upper cover 30 side, and which is formed of an eutectic alloy comprising germanium and a metal having aluminum as a main component; a first titanium layer 63; a first aluminum oxide film 62; and a first conductive layer 61.

Description

technical field [0001] The present invention relates to a resonance device and a method for manufacturing the resonance device. Background technique [0002] Conventionally, resonator devices manufactured using MEMS (Micro Electro Mechanical Systems) technology are widely used. This resonator device is formed, for example, by bonding an upper substrate to a lower substrate having resonators. [0003] Patent Document 1 discloses a bonding portion in which a diffusion prevention layer made of AuSn, a material with poor wettability, is laminated on a wafer, and an adhesive layer is formed on the surface of the diffusion prevention layer by retracting from the edge of the diffusion prevention layer. A functional layer whose function is likely to deteriorate due to the diffusion of AuSn is formed between the wafer and the diffusion prevention layer. The bonding portion is formed by shrinking the adhesive layer from the edge of the diffusion prevention layer, so that when AuSn e...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): H03H9/02B81B3/00B81C3/00H03H3/007H03H9/25
CPCH03H9/2489H03H9/0595H03H9/1057H03H3/0072B81C2203/019B81C1/00269B81C1/00293B81B2201/0271B81B7/0038B81C1/00285B81C2203/0118H03H9/2457
Inventor 福光政和出原健太郎
Owner MURATA MFG CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com