Silicon-based suspended photonic crystal surface-emitting type blue laser and preparation method thereof

Abstract

The invention discloses a silicon-based suspended photonic crystal surface-emitting type blue laser and a preparation method thereof. The silicon-based suspended photonic crystal surface-emitting typeblue laser comprises a silicon substrate layer, an AlGaN buffer layer, an n-GaN layer, an n-electrode, an active layer, a p-GaN layer, a p-electrode, and a photonic crystal formed by GaN etching on the surface or a photonic crystal layer grown and prepared on the GaN surface. According to the invention, the suspended structure in which sthe substrate is released from the back surface and the III-V group is controllably thinned is adopted, so that the adjustment and control of light field mode distribution can be realized, the high-efficiency coupling strength of the photonic crystal on the GaN surface and the high coupling strength of the photonic crystal on the active layer are optimized, and the realization of a low-threshold laser is facilitated. The photonic crystal is formed by etching on the GaN surface or the photonic crystal is prepared by growing on the GaN surface, so that the method is simpler and more convenient in process; meanwhile, the active layer is not damaged, and the method can be applied to electric pumping laser.

Description

technical field [0001] The invention discloses a silicon-based suspended photonic crystal surface-emitting blue light laser and a preparation method thereof, and belongs to the field of active photonic devices. Background technique [0002] Photonic crystal surface-emitting lasers (PCSEL) have the advantages of large emission area, high energy, small divergence angle, and good single-mode performance, while short-wavelength / blue lasers based on gallium nitride (GaN) materials are used in high-speed communications, display systems, Fields such as high-density memory have a wide range of applications and can achieve excellent performance and application prospects. [0003] In order to achieve high-efficiency coupling of the optical field between the photonic crystal and the active layer at the same time, the current reports on GaN-based photonic crystal surface-emitting lasers are based on the formation of photonic crystals (PC) by burying air holes inside GaN, or from the sur...

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Problems solved by technology

But at the same time, the problem is that the first method is complex and difficult, and it fails to obtain a good coupling strength between the optical field and the PC area. The second method causes damage to the active layer, and generally only Optically pumped laser

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