Semiconductor amplifier integrated on silicon substrate

Abstract

The invention discloses a semiconductor amplifier integrated on a silicon substrate, which comprises a mode field regulator, an InP-based semiconductor amplifier and a spot size converter. The mode field regulator is made of a polymer material and provided with an objective table and at least one group of optical transmission waveguides oppositely arranged relative to the objective table, and eachgroup of optical transmission waveguides comprises an optical input waveguide and an optical output waveguide. The InP-based semiconductor amplifier is arranged on the objective table and is providedwith an optical waveguide path, and light of the optical input waveguide is amplified by the optical waveguide path and then transmitted to the optical output waveguide. The spot size converter is made of a polymer material and is used as a connecting assembly among the optical input waveguide, the optical waveguide path and the optical output waveguide. According to the semiconductor amplifier integrated on a silicon substrate provided by the invention, heterogeneous integration between the lnP-based semiconductor amplifier and a silicon-based photonic chip is realized by using a hybrid integration technology, optical mode field matching, coupling and transmission of an lnP-based waveguide and a silicon-based waveguide are completed by using the mode field regulator, and finally, a low-loss and high-gain optical amplifier integrated on a silicon substrate is realized.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to an integrated semiconductor amplifier on a silicon substrate. Background technique [0002] With the increase in the scale of photonic integrated chips, the number of active devices integrated on the chip increases, which inevitably leads to an increase in the on-chip loss of optical power, resulting in a significant attenuation of signal strength, which reduces the signal-to-noise ratio and cannot fully utilize the photonic integrated chip. maximum potency. Therefore, optical amplification technology needs to be introduced to compensate the signal gain. However, limited by the incompatibility of material systems, silicon-based semiconductor optical amplifiers that can be used practically have not yet made breakthroughs, so semiconductor amplifiers with lnP-based materials can only be used. How to realize silicon-based photonic integrated chips and lnP-based On-chip integr...

AI Technical Summary

Problems solved by technology

However, limited by the incompatibility of material systems, silicon-based semiconductor optical amplifiers that can be used practically have not yet made breakthroughs, so semiconductor amplifiers with lnP-based materials can only be used. How to realize silicon-based photonic integrated chips and lnP-based On-chip integration of semiconductor amplifiers is the key to solving the problem

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