Unlock instant, AI-driven research and patent intelligence for your innovation.

Large-area three-dimensional-two-dimensional perovskite heterojunction in-situ preparation method

An in-situ preparation and perovskite technology, which is applied in semiconductor/solid-state device manufacturing, coating, photovoltaic power generation, etc., can solve the problems of low resource utilization, small area of ​​2D perovskite layer, unfavorable PSC devices, etc., to achieve The preparation method is simple, effective and environmentally friendly, the preparation conditions are mild and controllable, and the effects of collection and transmission are beneficial

Pending Publication Date: 2020-09-15
QUANZHOU NORMAL UNIV
View PDF5 Cites 2 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

3D polycrystalline perovskite materials are sensitive to humidity and temperature, and their long-term stability seriously restricts the industrial application of PSCs
3D perovskite is a polycrystalline structure with a large number of grain boundaries and defects, which is not conducive to obtaining efficient and stable PSC devices, and the area is small; 2D perovskite layer area is small, and the organic polar solvent contained in the spin coating solution will There are many uncertain effects on the film-forming quality of the 3D perovskite layer, and what is even more unfavorable is that these solvents have a certain degree of toxicity. If the follow-up treatment is not proper, large-scale application will inevitably lead to serious environmental problems.
3D perovskite is a polycrystalline structure with a large number of grain boundaries and defects, which is not conducive to obtaining efficient and stable PSC devices, and the area is small; 2D perovskite layer area is small, and the organic polar solvent contained in the spin coating solution will There are many uncertain effects on the film-forming quality of the 3D perovskite layer, and what is even more unfavorable is that these solvents have a certain degree of toxicity. If the follow-up treatment is not proper, large-scale application will inevitably lead to serious environmental problems.
Both the 3D perovskite material and the 2D perovskite material are dissolved in polar organic solvents. When the 2D perovskite material is coated on the surface of the 3D perovskite layer, the organic polar solvent contained in the coating solution will The film quality of the 3D perovskite layer has many adverse effects, and the toxicity of these solvents can also cause serious environmental problems
The saturated vapor of butylamine is easy to leak, causing serious environmental pollution; and the amount of organic amine is large, and the utilization rate of resources is not high

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Large-area three-dimensional-two-dimensional perovskite heterojunction in-situ preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0036] In order to make the above-mentioned features and advantages of the present invention easier to understand, the following specific embodiments are described in detail with reference to the accompanying drawings, but the present invention is not limited thereto.

[0037] refer to figure 1 .

[0038] In a preferred embodiment of the present invention:

[0039] A large-area three-dimensional-two-dimensional perovskite heterojunction in-situ preparation method, comprising the following steps:

[0040] (1) MAPbI 3 Preparation of perovskite precursor solution: MAI and PbI 2 Add it into the mixed solvent of N,N-dimethylformamide and dimethyl sulfoxide with a volume ratio of 4:1 in an equimolar ratio, and stir the mixture at 70°C for 6 hours to prepare a concentration of 1.2mol / LMAPbI 3 Perovskite Precursor. Among them, MA + for CH 3 NH 3 + ;

[0041] (2) Preparation of the anti-solvent solution: a certain amount of octadecylamine iodide was added to the anti-solven...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

No PUM Login to View More

Abstract

A large-area three-dimensional-two-dimensional perovskite heterojunction in-situ preparation system comprises a reaction cavity, and is characterized in that a bracket assembly is arranged in the reaction cavity, a solvent circulation assembly is arranged outside the reaction cavity, and a gas circulation pipeline is arranged at the top of the reaction cavity. According to the invention, the large-area high-quality 2D perovskite thin film is grown on the 3D quasi-monocrystalline perovskite layer in situ to form the 3D-2D perovskite heterojunction, so that the photovoltaic performance and the long-term stability of the perovskite solar cell are improved. The perovskite precursor solution and the anti-solvent solution are recycled in a closed mode, environmental pollution is reduced, and meanwhile the resource utilization rate is increased.

Description

technical field [0001] The invention belongs to the technical field of perovskite materials, and in particular relates to an in-situ preparation method of a large-area three-dimensional-two-dimensional perovskite heterojunction. Background technique [0002] In recent years, the photoelectric conversion efficiency of the perovskite solar cell (PSC) laboratory has been refreshed from 3.8% in 2009 to 25.2% in 2019, which has industrial value. However, most of these certified or reported high-efficiency PSCs are based on relatively small areas (generally 0.1cm 2 , some as small as 0.03cm 2 ) of three-dimensional (3D) polycrystalline perovskite materials. 3D polycrystalline perovskite materials are sensitive to humidity and temperature, and their lack of long-term stability seriously restricts the industrial application of PSCs. In order to improve the long-term stability of 3D perovskite materials, one of the effective solutions is to prepare a two-dimensional (2D) perovskit...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
IPC IPC(8): H01L51/42H01L51/46H01L51/48C03C17/36
CPCC03C17/3602C03C17/3618C03C17/3642C03C17/3649C03C2217/241C03C2217/263C03C2217/211C03C2217/28C03C2218/151C03C2218/115C03C17/3655H10K71/12H10K85/30H10K30/20Y02E10/549
Inventor 肖尧明
Owner QUANZHOU NORMAL UNIV