Powder for coating an etch chamber

Abstract

Particle powder, a number greater than 95% of the particles having a circularity greater than or equal to 0.85, the powder containing more than 99.8% of a rare earth oxide and / or a hafnium oxide and / or an aluminium oxide, as a percentage by weight on the basis of the oxides, and having: a median particle size D50 less than 15 [Mu]m, a 90th percentile of the particle sizes D90 less than 30 [Mu]m, and a size dispersion index (D90 -D10) / D10 less than 2; and a relative density greater than 90%.

Description

technical field [0001] The present invention relates to a powder suitable for deposition by plasma, a method for producing such a powder, and a coating obtained by plasma spraying said powder, more particularly to a semiconductor etching chamber coating. Background technique [0002] The interior surfaces of chambers used for processing (for example by plasma etching) semiconductors such as silicon wafers are usually protected with a ceramic coating applied by plasma spraying. The coating needs to be highly resistant to halogen-containing plasmas or highly corrosive environments. Plasma spraying requires a powder with a high flowability and a granular form that allows proper heating during the spraying process as a feed powder. More specifically, the size of the particles must be sufficient to make the particles permeable to the plasma and limit evaporation losses. [0003] For example, for the formation of larger (and porous) aggregates, more particularly sintered aggreg...

AI Technical Summary

Problems solved by technology

[0015] However, there remains a need for semiconductor etch chamber coatings with increased corrosion resistance and reduced defect counts

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