Preparation method of high-quality AIN template with controllable polarity
A template and polarity technology, applied in the field of nitride semiconductor preparation, can solve the problems of reducing device quantum efficiency and increasing loss, and achieve the effect of improving quantum efficiency, improving device performance, and realizing polarity control
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0029] The following will refer to figure 1 Illustrating Embodiment 1 of the present invention, figure 1 The core idea of controlling the polar surface of a high-quality AlN template provided by this embodiment is shown, which specifically includes the following steps:
[0030] The first step is to provide a high temperature resistant substrate, one side of the substrate has an atomically smooth surface or a patterned surface, preferably a sapphire substrate, with a thickness of 350 microns to 500 microns.
[0031] In the second step, the magnetron sputtering technique is used to deposit AlN on the substrate in the first step to make an AlN template. The temperature of the deposition chamber is first raised to the sputtering temperature, and then the substrate is placed in the chamber for sputtering. The sputtering temperature is 25°C-1000°C, preferably, 600°C. Oxygen-containing gas is used during sputtering and is mixed with pure nitrogen or inert gas such as nitrogen an...
Embodiment 2
[0034] The following will refer to image 3 Illustrating Embodiment 2 of the present invention, image 3 The core idea of controlling the polar surface of a high-quality AlN template provided by this embodiment is shown, which specifically includes the following steps:
[0035] The first step is to provide a high temperature resistant substrate, one side of the substrate has an atomically smooth surface or a patterned surface, preferably a sapphire substrate, with a thickness of 350 microns to 500 microns.
[0036] In the second step, the magnetron sputtering technique is used to deposit AlN on the substrate in the first step to make an AlN template. The temperature of the deposition chamber is first raised to the sputtering temperature, and then the substrate is placed in the chamber for sputtering. The sputtering temperature is 25°C-1000°C, preferably, 600°C. During sputtering, pure nitrogen gas is used for sputtering, and the flow rate is 1 sccm-1 slm, and the preferre...
Embodiment 3
[0039] The following will refer to Figure 4 Illustrating Embodiment 3 of the present invention, image 3 The core idea of controlling the polar surface of a high-quality AlN template provided by this embodiment is shown, which specifically includes the following steps:
[0040] The first step is to provide a high temperature resistant substrate, one side of the substrate has an atomically smooth surface or a patterned surface, preferably a sapphire substrate, with a thickness of 350 microns to 500 microns.
[0041] In the second step, the magnetron sputtering technique is used to deposit AlN on the substrate in the first step to make an AlN template. The temperature of the deposition chamber is first raised to the sputtering temperature, and then the substrate is placed in the chamber for sputtering. The sputtering temperature is 25°C-1000°C, preferably, 600°C. During sputtering, inert gases such as nitrogen and argon are used for sputtering. Preferably, the gases used d...
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More