Reverse conducting IGBT device
A reverse-conducting device technology, applied in the field of power semiconductor devices, can solve the problems of large local power consumption, local concentration of current, device burnout, etc., and achieve the effect of eliminating the snap-back phenomenon
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Embodiment 1
[0022] Such as image 3 As shown, a reverse conduction type IGBT device includes an emitter metal 1, a heavily doped second conductivity type semiconductor emitter region 2, a heavily doped first conductivity type semiconductor ohmic contact region 3, a moderately doped first conductivity type semiconductor Body region 5, polysilicon gate electrode 6, gate insulating oxide layer 4, lightly doped second conductivity type semiconductor drift region 7, heavily doped first conductivity type semiconductor collector region 8, heavily doped first conductivity type semiconductor diode Region 9, heavily doped second conductivity type semiconductor diode region 10, collector metal 11;
[0023]The two sides of the polysilicon gate electrode 6 are heavily doped second conductivity type semiconductor emission regions 2, and the side of the heavily doped second conductivity type semiconductor emission region 2 away from the polysilicon gate electrode 6 is heavily doped first conductivity ty...
Embodiment 2
[0031] Such as Figure 5 As shown, the difference between this embodiment and Embodiment 1 is that a moderately doped second conductive type is provided between the lower surface of the lightly doped second conductive type semiconductor drift region 7 and the heavily doped second conductive type semiconductor diode region 10. type semiconductor field stop region 12 , the lower surface of the second conductivity type semiconductor field stop region 12 is in direct contact with the first conductivity type semiconductor collector region 8 and the heavily doped second conductivity type semiconductor diode region 10 .
[0032] The introduction of the second conductivity type semiconductor field stop region 12 can further optimize the compromise relationship between the forward conduction voltage drop and the reverse withstand voltage of the reverse conduction type IGBT.
[0033] The reverse conduction IGBT device proposed by the present invention is also suitable for devices made o...
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