SiC MOSFET gate driving circuit with negative voltage turn-off and crosstalk suppression functions

Abstract

The invention discloses a SiC MOSFET (Metal-Oxide-Semiconductor Field Effect Transistor) gate driving circuit with negative voltage turn-off and crosstalk suppression functions. The circuit is characterized in that a front end of a first voltage stabilizing tube connected in parallel with a first capacitor is connected with output ends of preceding-stage power push-pull circuits T1 and T2, rear ends of the first capacitor and the first voltage-regulator tube are connected with a negative electrode of the first diode, a positive electrode of a second diode and a front end of a second resistor,a negative electrode of the second diode is connected with a grounding end, a third capacitor and a rear end of a fourth resistor through a parallel circuit of the second capacitor and a third resistor, a positive electrode of the first diode is connected with a front end of the first resistor, a grid electrode of the first mos transistor is connected with the grounding end through the fourth resistor, a drain electrode of the first mos transistor is connected with the grounding end through the third capacitor, and a rear end of the first resistor, a rear end of the second resistor and a source electrode of the first mos transistor are connected with a grid electrode of the SiC MOSFET.

Description

technical field [0001] The invention belongs to the technical field of power electronics drive, and in particular relates to a SiC MOSFET gate drive circuit with functions of negative voltage shutdown and crosstalk suppression. Background technique [0002] As a new type of semiconductor material with outstanding performance and ideal, silicon carbide material has a numerical value, its thermal conductivity and bandgap width are generally more than three times that of Si, and the carrier saturation and drifting speed is faster. The narrow bandwidth of the traditional Si MOSFET directly affects its performance in terms of blocking voltage, switching loss, and upper limit of switching frequency in practical applications, while the power switch made of SiC has small on-resistance, fast switching speed and high voltage resistance. High temperature meets the switching requirements under high power conditions. [0003] As the switching speed and bus voltage increase, when the SiC...

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Problems solved by technology

Under the action of the above two aspects, the gate-source potential of the MOSFET will produce large positive or negative fluctuations. Excessive positive peaks will easily exceed the threshold voltage of the switch and cause misleading conduction. Excessive negative peaks will exceed The maximum negative pressure that the switch tube can withstand will damage the MOSFET

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