Patterning paste

A technology of paste paste and patterning, applied in chemical/electrolytic methods to remove conductive materials, instruments, inks, etc., can solve the problem of slowing down the processing time of silver nanowire films

Pending Publication Date: 2020-09-29
PPG IND OHIO INC
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Patterning of these silver nanowire films may slow down overall processing time

Method used

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Examples

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example

[0060] The following examples are presented to demonstrate the general principles of the invention. The invention should not be considered limited to the particular examples presented. All parts and percentages in the examples are by weight unless otherwise indicated.

example 1

[0062] A patterning paste was prepared by adding 7.24 grams of deionized water and 28.96 grams of ethylene glycol to a 10 oz polypropylene container equipped with a stirrer. 4.24 grams of 2-hydroxyethylcellulose (HEC) (viscosity average molecular weight (Mv) ~ 90,000) was incorporated by means of a stirrer. After the HEC was dissolved, 10 grams of guanidinium thiocyanate was incorporated by means of a stirrer and mixed until dissolved. After the guanidine thiocyanate had dissolved, 0.25 g of SULFOPON 30S03 was mixed in. After adding SULFOPON 30S03, directly mix in 0.57 g of TEGO Airex 902W. 48.74 grams of BLANC FIXE MICRO (barium sulfate) were mixed in until a uniform dispersion of the mixture was observed. The material was then moved to and processed through a three-roll mill and placed into new 10 oz polypropylene containers.

[0063] Table 1

[0064] components weight / gram) Deionized water 7.24 Ethylene glycol 1

28.96 2-Hydroxyethylcell...

example 2

[0072] A patterned paste material was prepared by adding 7.65 grams of deionized water and 30.58 grams of ethylene glycol to a 10 oz polypropylene container equipped with a stirrer. 4.48 grams of 2-hydroxyethylcellulose (HEC) (viscosity average molecular weight (Mv) ~ 90,000) were incorporated by means of a stirrer. After the HEC was dissolved, 4.97 grams of guanidinium thiocyanate was incorporated by means of a stirrer and mixed until dissolved. After the guanidine thiocyanate was dissolved, 0.26 grams of DYNAX DX4005N was mixed in. After adding DYNAX DX4005N, directly mix in 0.60 g of TEGOAirex 902W. 51.47 grams of BLANC FIXE MICRO (barium sulfate) were mixed in until a uniform dispersion of the mixture was observed. The material was then moved to and processed through a three-roll mill and placed into new 10 oz polypropylene containers.

[0073] Table 2

[0074]

[0075]

[0076] 7 Wetting and leveling additives commercially available from Dynax Corporation (Poun...

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Abstract

A patterning paste is disclosed for patterning metal nanowires, the patterning paste including a complexing agent containing guanidine thiocyanate. A method of selectively patterning a substrate having metal nanowires includes: providing a substrate having a surface bearing metal nanowires; and selectively applying the patterning paste to the substrate such that the metal nanowires are selectivelycut into a pattern. A consumer electronic product includes: a substrate having a surface bearing metal nanowires. The metal nanowires of the substrate are selectively patterned by applying the patterning paste to the substrate such that the metal nanowires are selectively cut into the pattern.

Description

technical field [0001] The present invention relates to a patterning paste for patterning metal nanowires, a method for selectively patterning a substrate with metal nanowires, and a consumer electronic product. Background technique [0002] Silver nanowire films are gaining popularity as a possible replacement for indium tin oxide (ITO) in conductive films or in applications where flexibility is an important consideration. Patterning of these silver nanowire films can slow down the overall processing time. This is because current techniques require printing complex patterned layers, selectively removing them, and then etching before finally removing the mask, or by waiting for a laser to etch the pattern. Contents of the invention [0003] The present invention relates to a patterning paste for patterning metal nanowires, the patterning paste comprising a complexing agent comprising guanidine thiocyanate. [0004] The invention also relates to a method of selectively pa...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/3213H01L29/41B82Y40/00G06F3/041H05K3/06C23F1/02
CPCB82Y40/00C23F1/02C23F1/10H01L21/32133H05K3/067G06F2203/04103H05K2201/026H05K2203/0545C09D11/037C09D11/52G06F3/044G06F2203/04102G06F2203/04112H01Q1/38H05K1/09H05K2201/0388
Inventor P·F·齐达姆S·R·德柏雷
Owner PPG IND OHIO INC
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