Semiconductor device, imaging device, imaging system, and mobile object
A technology of semiconductors and transistors, applied in the field of semiconductor devices, can solve problems such as the loss of functions of semiconductor devices, and achieve the effect of increasing the remaining life
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no. 1 example
[0036] figure 1 An example of the structure of the semiconductor device according to the present embodiment is illustrated. The semiconductor device 150 includes the semiconductor device 100 and the lifetime estimation unit 109 . The semiconductor device 100 is a circuit having many functions such as light reception, light emission, AD conversion processing, signal processing, communication processing, storage unit, and detection unit. The structure and operation of the semiconductor device 100 will now be described.
[0037] The first circuit block 101, the second circuit block 102, and the Nth circuit block 103 are circuits having many functions such as light reception, light emission, AD conversion processing, signal processing, communication processing, storage unit, and detection unit.
[0038] The voltage control unit 104 supplies voltage values set by using a signal from the drive mode selection unit 105 corresponding to the drive control unit to the first circuit b...
no. 2 example
[0098] In the description according to the present embodiment, an image sensor is used as the semiconductor device 100 according to the first embodiment.
[0099] Figure 4 The image capture device 450 illustrated in includes an image sensor and a lifetime estimation unit 109 . The image sensor 400 is a CMOS sensor. A pixel array 402 including pixels 401 arranged in rows and columns, a vertical scanning circuit 403 , a vertical output line 404 and a column circuit 405 are provided. The image sensor 400 includes a reference signal generation circuit 406 , a storage unit 407 , a counter circuit 408 , a horizontal scanning circuit 409 , a signal processing circuit 410 , an image capture mode control unit 411 , and a lifetime estimation unit 109 .
[0100] will now refer to Figure 5 The structure of each pixel 401 is described.
[0101] Each pixel 401 includes photodiodes 501a and 501b. Light passing through a single microlens (not shown) is incident on photodiodes 501 a and...
no. 3 example
[0152] An image capturing device according to the present embodiment will be described, mainly describing points different from the second embodiment. The image capture device according to the present embodiment can accurately acquire information on the remaining lifetime of the image sensor.
[0153] Figure 8 An image capture device 800 according to the present embodiment is illustrated.
[0154] According to the image capture device 800 of this embodiment and Figure 5 The image capture device 450 illustrated in is different in that it includes a state acquisition unit 812 and a lifetime estimation unit 813 connected to the state acquisition unit 812 .
[0155] The following description includes a case where hot carrier injection (HC) is dominant in terms of factors of performance impairment of the image sensor 400 . In this case, when the image sensor 400 starts to operate as a new product, the remaining lifetime of the image sensor 400 is evaluated by using the ratio o...
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