Flexible quasi-SIOx thin film growth device

Abstract

The invention discloses a flexible quasi-SIOx thin film growth device. The device comprises a reaction cavity, a gas path system, a control system, a vacuum system and a tail gas treatment system, wherein the gas path system, the control system, the vacuum system and the tail gas treatment system are connected with the reaction cavity. A radio-frequency electrode is horizontally arranged in the reaction cavity in a suspended manner and is connected with the positive pole of a radio-frequency power source, and the reaction cavity is connected with the negative pole of the radio-frequency powersource. A gas even mixer is arranged below the radio-frequency electrode. A substrate used for thin film deposition is fixedly to the inner side of a top cover of the reaction cavity. The gas even mixer is connected with the gas path system. A first gas outlet is formed on the reaction cavity to be connected with the vacuum system. The gas path system comprises a hexamethyldisiloxane storage tank,a nitrogen storage tank, an oxygen storage tank and a carbon tetrafluoride storage tank, each storage tank is connected with a main pipeline at the front end of the reaction cavity through a branch pipeline, and the main pipeline is connected with the gas even mixer. By means of the device, a flexible quasi-SIOx thin film can be prepared under the room temperature, good packaging performance is achieved, and the flexible quasi-SIOx thin film can be used as a good flexible insulation medium material.

Description

technical field [0001] The invention relates to a thin film growth device, in particular to a flexible silicon oxide-like thin film growth device. Background technique [0002] With the rapid development of flexible electronic products, flexible thin film packaging materials have become extremely important. Flexible electronic products require flexible packaging films to be both dense to prevent the entry of oxygen, water, and other substances, and to be mechanically flexible. A device commonly used for low temperature growth of tight packaging materials such as aluminum oxide is an atomic layer deposition device (ALD). Although ALD can grow dense aluminum oxide, the growth rate is very slow, and the toughness of the aluminum oxide film is not enough, it is very easy to produce micro-cracks during the bending process, and cannot effectively protect the device from oxygen or oxygen in the environment for a long time. Intrusion of water vapor. [0003] In addition to alumin...

AI Technical Summary

Problems solved by technology

Conventional PECVD grows silicon oxide or silicon nitride of good quality and needs to be heated above 300°C, while the materials, devices and substrates of flexible electronic products generally cannot withstand higher temperatures

Therefore, conventional PECVD is basically unable to meet the needs of thin film growth for flexible electronic packaging.

Moreover, conventional PECVD gas sources such as silane, ammonia, hydrogen, etc. used for the growth of dense thin film materials are more dangerous.

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